scholarly journals Effect of SiC-Impurity Layer and Growth Temperature on MgB2 Superconducting Tapes Fabricated by HPCVD

2012 ◽  
Vol 18 (1-3) ◽  
pp. 36-40 ◽  
Author(s):  
Mahipal Ranot ◽  
Won Kyung Seong ◽  
Soon-Gil Jung ◽  
Won Nam Kang ◽  
Jinho Joo ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Superconducting Tapes ◽  
Impurity Layer

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

ON THE MOBILITY OF GaAs-AlGaAs HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GaAs

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-255-C5-258 ◽  
Author(s):  
A. GOLD
Keyword(s):  
Impurity Layer

Influence of growth temperature on the composition and physiology of micro-organisms

1972 ◽  
Vol 22 (4) ◽  
pp. 527-540 ◽  
Author(s):  
K. Hunter ◽  
A. H. Rose
Keyword(s):  
Growth Temperature ◽  
Micro Organisms

Effects of Buffer-layer Thickness and Active-layer Growth Temperature on ZnO Nanocrystalline Thin Films Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 52 (9) ◽  
pp. 739-744 ◽  
Author(s):  
Jae-Young Leem ◽  
Byunggu Kim ◽  
Giwoong Nam ◽  
Youngbin Park ◽  
Hyunggil Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Active Layer ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Layer Growth ◽  
Buffer Layer Thickness ◽  
Nanocrystalline Thin Films

Effect of oxide growth temperature on the electrical performance of extremely thin (∼3 nm) wet oxides of silicon

2003 ◽  
Vol 98 (2) ◽  
pp. 140-143 ◽  
Author(s):  
Vishwanath Krishna Bhat ◽  
K.N. Bhat ◽  
A. Subrahmanyam
Keyword(s):  
Growth Temperature ◽  
Electrical Performance ◽  
Oxide Growth

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

scholarly journals Characteristics of Phomopsis juglandina (Sacc.) Hohn. Associated with Dieback of Walnut in the Climatic Conditions of Southern Romania

Agronomy ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 46
Author(s):  
Cristina Mihaescu ◽  
Daniel Dunea ◽  
Adrian Gheorghe Bășa ◽  
Loredana Neagu Frasin
Keyword(s):  
Growth Temperature ◽  
Potential Evapotranspiration ◽  
Optimal Growth ◽  
Climatic Conditions ◽  
Cultural Characteristics ◽  
Optimal Growth Temperature ◽  
Conidial State ◽  
Optimal Ph

Phomopsis juglandina (Sacc.) Höhn., which is the conidial state of Diaporthe juglandina (Fuckel) Nitschke, and the main pathogen causing the dieback of branches and twigs of walnut was recently detected in many orchards from Romania. The symptomatological, morphological, ultrastructural, and cultural characteristics, as well as the pathogenicity of an isolate of this lignicolous fungus, were described and illustrated. The optimum periods for infection, under the conditions prevailing in Southern Romania, mainly occur in the spring (April) and autumn months (late September-beginning of October). Strong inverse correlations (p < 0.001) were found between potential evapotranspiration and lesion lengths on walnut branches in 2019. The pathogen forms two types of phialospores: alpha and beta; the role of beta phialospores is not well known in pathogenesis. In Vitro, the optimal growth temperature of mycelial hyphae was in the range of 22–26 °C, and the optimal pH is 4.4–7. This pathogen should be monitored continuously due to its potential for damaging infestations of intensive plantations.

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