Thermal Conductivity Of Bi/Sb Superlattice

ABSTRACTThe temperature-dependent cross-plane thermal conductivity of a 1-μm thick 50Å Bi / 50Å Sb superlattice on a (111) CdTe substrate was measured, using a differential 3-ω method. This method uses the temperature difference between the superlattice sample and a reference sample to calculate its cross-plane thermal conductivity. However, the substrate thermal conductivity is comparable to or smaller than the superlattice thermal conductivity near room temperature. This results in a very small or negative temperature difference, making the existing data reduction method inapplicable. Based on an improved model, the temperature-dependent thermal conductivity of the Bi/Sb superlattice is obtained and is about half of the literature value of Bi0.5Sb0.5 bulk alloy.

High Energy Flux Detector Using CdTe P-I-N Layers

Abstractn-and p-type doping of CdTe grown heteroepitaxially on GaAs substrate by radical assisted metal organic chemical vapor deposition technique were studied. n-type doping was studied by the gas phase n-butyliodine doping during the film growth, whereas p-type doping was carried by treating the undoped layers with alkaline metal compound (Na2Te) and excimer laser radiation. Highly conductive n-and p-layers were thus obtained which formed good ohmic contact with aluminum and gold electrodes, respectively. Using this technique, n-and p- layers were formed on intrinsic CdTe substrate to form p-i-n diode. This p-i-n structure showed a good diode characteristics and good sensitivity to X-ray radiation with dark current in the order of nA/mm 2 at room temperature.