Amorphous silicon carbonitride thin-film coatings produced by remote nitrogen microwave plasma chemical vapour deposition using organosilicon precursor

2017 ◽  
Vol 31 (12) ◽  
pp. e3871 ◽  
Author(s):  
A.M. Wrobel ◽  
P. Uznanski ◽  
A. Walkiewicz-Pietrzykowska ◽  
K. Jankowski

Author(s):  
CHIA-FU CHEN ◽  
KAZUHITO NISHIMURA ◽  
ENSEI KO ◽  
EIJI OGAWA ◽  
SATORU HOSOMI ◽  
...  




1996 ◽  
Vol 281-282 ◽  
pp. 264-266 ◽  
Author(s):  
Akimitsu Hatta ◽  
Hidetoshi Suzuki ◽  
Ken-ichi Kadota ◽  
Toshimichi Ito ◽  
Akio Hiraki


1990 ◽  
Vol 202 ◽  
Author(s):  
Sue-Anne Stuart ◽  
Steven Prawer ◽  
Alon Hoffman ◽  
Alec Moodie ◽  
Paul Weiser

ABSTRACTLarge diamond particles up to 30μm in diameter have been deposited on W wire tips using Microwave Plasma Chemical Vapour Deposition. Raman, SEM and TEM investigations were all carried out on a single particle. Large growth steps were observed on (100) facets but were absent on the (111) facets. Raman measurements indicated greater crystalline quality for (100) than (111) facets. TEM revealed the (111) facets to be covered with small islands of diamond about 10Å high. The dominant defect was found to be stacking faulting on the {111} planes which gives rise to some hexagonal spacings in the electron diffraction pattern. The results suggest that growth in the <111> and <100> directions are driven by different mechanisms.



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