Depleted and ultradepleted basalt and picrite in the Davis Strait: Paleocene volcanism associated with a transform continental margin

Volcanic rocks from the Davis Strait were studied to elucidate the tectonomagmatic processes during rifting and the start of seafloor spreading, and the formation of the Ungava transform zone between Canada and Greenland. The rocks are from the wells Hekja O-71, Gjoa G-37, Nukik-2 and Hellefisk-1, and from dredges on the northern Davis Strait High. Ages range from Danian to Thanetian (dinocyst palynozones P2 to P5, 62.5–57.2 Ma). The rocks are predominantly basaltic, but include picrites on the Davis Strait High. Calculated mantle potential temperatures for the Davis Strait High are c. 1500°C, suggesting the volume of magma generated was large; this is consistent with geophysical evidence for magmatic underplating in the region. The rare earth element patterns indicate residual mantle lithologies of spinel peridotite and, together with Sr–Nd isotopes, indicate melting beneath regionally extensive, depleted asthenosphere beneath a lithosphere of thickness similar to, or thinner than, beneath Baffin Island and distinctly thinner than beneath West Greenland. Some sites include basalts with more enriched compositions. Depleted and enriched basalts in the Hellefisk well show contemporaneous melting of depleted and enriched mantle components in the asthenosphere. The Hekja and Davis Strait High basalts and picrites have unique, ultradepleted compositions with (La/Sm)N < 0.5, (Tb/Lu)N < 1 and Nb/Zr = 0.013–0.027. We interpret these compositions as a product of the melting regime within the Ungava transform zone, where the melting column would be steep-sided in cross-section and not triangular as expected at normal spreading ridges. Magmatism along the transform stopped when the tectonic regime changed from transtension to transpression during earliest Eocene time.

Heterogeneous to homogeneous melting transition visualized with ultrafast electron diffraction

The ultrafast laser excitation of matters leads to nonequilibrium states with complex solid-liquid phase-transition dynamics. We used electron diffraction at mega–electron volt energies to visualize the ultrafast melting of gold on the atomic scale length. For energy densities approaching the irreversible melting regime, we first observed heterogeneous melting on time scales of 100 to 1000 picoseconds, transitioning to homogeneous melting that occurs catastrophically within 10 to 20 picoseconds at higher energy densities. We showed evidence for the heterogeneous coexistence of solid and liquid. We determined the ion and electron temperature evolution and found superheated conditions. Our results constrain the electron-ion coupling rate, determine the Debye temperature, and reveal the melting sensitivity to nucleation seeds.

Contact Melting Mechanism in the Cu-Ti System

A mechanism for the formation of the interaction zone at the interlayer interface of the explosively welded Cu-Ti system composite is proposed and experimentally proved; the heat treatment was performed under a contact melting regime.

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

ABSTRACTWe have investigated the solidified microstructure of nucleation-generated grains obtained via complete melting of Si films on SiO2 at high nucleation temperatures. This was achieved using a high-temperature-capable hot stage in conjunction with excimer laser irradiation. As predicted by the direct-growth model that considers (1) the evolution in the temperature of the solidifying interface and (2) the subsequent modes of growth (consisting of amorphous, defective, and epitaxial) as key factors, we were able to observe the appearance of “normal” grains that possess a single-crystal core area. These grains, which are in contrast to previously reported flower-shaped grains that fully make up the microstructure of the solidified films obtained via irradiation at lower preheating temperatures (and amongst which these “normal” grains emerge), indicate that epitaxial growth of nucleated crystals must have taken place within the grains. We discuss the implications of our findings regarding (1) the validity of the direct-growth model, (2) the nature of the heterogeneous nucleation mechanism, and (3) the alternative explanations and assumptions that have been previously employed in order to explain the microstructure of Si films obtained via nucleation and growth within the complete melting regime.