Multipeak Emissions and Electrical Properties of ZnO/Si Heterojunctions Based on ZnO Nanoflakes by Spin Coating Technique

ZnO/Si heterojunctions have been fabricated by spinning ZnO nanoflakes on the p-type single crystal silicon by using the spin coating technique. Photoluminescence spectra of as-grown and annealed ZnO/Si heterojunctions have been recorded under the excitation of 336 nm. Multipeaks between ∼360 nm and ∼430 nm from annealed ZnO/Si heterojunctions have been analyzed, the origins of which have been ascribed to the effects of one or multiple LO phonons. The rectifying effects can be observed from the prototypical devices based on ZnO/Si heterojunctions. Although the parameters obtained by analyzing the current density-voltage characteristics are away from those from the ideal device, it is believed that ZnO/Si heterojunctions in the present work will be a potential candidate in the optoelectronic field through modulating and optimizing the fabrication conditions.

Preparation of ZnO nanoflakes and assessment of their removal of HCN, NO2 and SO2 toxic gases

Zinc oxide nanoflakes were synthesized using the wet precipitation method from aqueous solutions of zinc nitrate and sodium hydroxide. The obtained materials were characterized by means of X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and nitrogen adsorption–desorption methods. The presence of sodium lauryl sulfate in the preparation of zinc oxide resulted in thinner, larger size, and higher specific surface area nanoflakes. The saturated adsorption capacities of zinc oxide nanoflakes for HCN, NO2, and SO2 were 216 mg g–1, 81 mg g–1, and 38 mg g–1, respectively. These results suggest that the material is a potential candidate for the removal of these toxic gases.