Homomesy in Products of Three Chains and Multidimensional Recombination

J. Propp and T. Roby isolated a phenomenon in which a statistic on a set has the same average value over any orbit as its global average, naming it homomesy. They proved that the cardinality statistic on order ideals of the product of two chains poset under rowmotion exhibits homomesy. In this paper, we prove an analogous result in the case of the product of three chains where one chain has two elements. In order to prove this result, we generalize from two to n dimensions the recombination technique that D. Einstein and Propp developed to study homomesy. We see that our main homomesy result does not fully generalize to an arbitrary product of three chains, nor to larger products of chains; however, we have a partial generalization to an arbitrary product of three chains. Additional corollaries include refined homomesy results in the product of three chains and a new result on increasing tableaux. We conclude with a generalization of recombination to any ranked poset and a homomesy result for the Type B minuscule poset cross a two element chain.

Statistical convergence of double sequences on product time scales

In this study, we present the basic concepts of statistical convergence for double sequences on an arbitrary product time scale. Moreover, we investigate the connection between statistical convergence for double sequences and double Cesàro summability on a product time scale.

Some properties of C-reflexive locally convex spaces

In this note, we shall prove that the class of C-reflexive spaces is stable with respect to separated quotient, arbitrary product and sum, which is not the case for the closed subspaces and the dense hyper planes. If the quotient mapping lifts compact disks, then the class of C-reflexive spaces is three-space stable.

Pattern Dependent Modeling for CMP Optimization and Control

In previous work, we have formalized the notions of “planarization length” and “planarization response function” as key parameters that characterize a given CMP consumable set and process. Once extracted through experiments using carefully designed characterization mask sets, these parameters can be used to predict polish performance in CMP for arbitrary product layouts. The methodology has proven effective at predicting oxide interlevel dielectric planarization results.In this work, we discuss extensions of layout pattern dependent CMP modeling. These improvements include integrated up and down area polish modeling; this is needed to account for both density dependent effects, and step height limits or step height perturbations on the density model. Second, we discuss applications of the model to process optimization, process control (e.g. feedback compensation of equipment drifts), and shallow trench isolation (STI) polish. Third, we propose a framework for the modeling of pattern dependent effects in copper CMP. The framework includes “removal rate diagrams” which concisely capture dishing height and step height dependencies in dual material polish processes.