Fast-sweeping Langmuir probes: what happens to the I-V trace when sweeping frequency is higher than the ion plasma frequency?

Limited particle transit time is one of several limiting factors which determines the maximum temporal resolution of a Langmuir probe. In this work, we have revisited known fast sweep Langmuir probe techniques in a uniform, quiescent multi-dipole confined hot cathode discharge with two operation scenarios: one in which the probe sweeping frequency fsweep is much lower than the ion plasma frequency fpi, another one where fsweep is much greater than fpi, respectively. This allows the investigation of the effect of limited ion-motion on I-V traces. Serious distortions of I-V traces at high frequencies, previously claimed to be ion-motion limitation effect, was not found in the degree previously claimed unless shunt resistance is sufficiently high, despite achieving a ratio of ~ 3 between the probe sweeping frequency and the ion plasma frequency. On the other hand, evidences of sheath capacitance on the I-V trace have been observed. Distortions of I-V traces qualitatively agrees with predictions of sheath capacitance response to the sweeping voltage. Additionally, techniques in fast sweep Langmuir probe are briefly discussed. The comparison between a High-speed dual Langmuir probe (HDLP) and the single probe setup shows that the capacitive response can be removed via subtracting a leakage current for the single probe setup almost as effective as using an HDLP setup, but the HDLP setup does remain advantageous in its facilitation of better recovery of weak current signal common in low plasma density situations.

Conductivity mechanism in ionic 2D carbon nitrides: from hydrated ion motion to enhanced photocatalysis

Carbon nitrides are among the most studied materials for photocatalysis, however, limitations arise from inefficient charge separation and transport within the material. Here, this aspect is addressed in the 2D carbon nitride poly(heptazine imide) (PHI) by investigating the influence of various counterions, such as M = Li+, Na+, K+, Cs+, Ba2+, NH4+ and tetramethyl ammonium, on the material’s conductivity and photocatalytic activity. These ions in the PHI pores affect the stacking of the 2D layers, which further influences the predominantly ionic conductivity in M-PHI. Na-containing PHI outperforms the other M-PHI in various relative humidity (RH) environments (0-42 %RH) in terms of conductivity, likely due to pore channel geometry and size of the (hydrated) ion. With increasing RH, the ionic conductivity increases by 4-5 orders of magnitude (for Na-PHI up to 10-5 S cm-1 at 42 %RH). At the same time, the highest photocatalytic hydrogen evolution rate is observed for Na-PHI, which is mirrored by increased photo-generated charge carrier lifetimes, pointing to efficient charge carrier stabilization by mobile ions. These results indicate that ionic conductivity is an important parameter that can influence the photocatalytic activity. Besides, RH-dependent ionic conductivity is of high interest for separators, membranes, or sensors.

Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review

Achieving multi-level devices is crucial to efficiently emulate key bio-plausible functionalities such as synaptic plasticity and neuronal activity, and has become an important aspect of neuromorphic hardware development. In this review article, we focus on various ferromagnetic (FM) and ferroelectric (FE) devices capable of representing multiple states, and discuss the usage of such multi-level devices for implementing neuromorphic functionalities. We will elaborate that the analog-like resistive states in ferromagnetic or ferroelectric thin films are due to the non-coherent multi-domain switching dynamics, which is fundamentally different from most memristive materials involving electroforming processes or significant ion motion. Both device fundamentals related to the mechanism of introducing multilevel states and exemplary implementations of neural functionalities built on various device structures are highlighted. In light of the non-destructive nature and the relatively simple physical process of multi-domain switching, we envision that ferroic-based multi-state devices provide an alternative pathway toward energy efficient implementation of neuro-inspired computing hardware with potential advantages of high endurance and controllability.

Numerical analysis of trajectories in a Cassinian ion trap of second order with trap door ion inlet

Ion traps like the Orbitrap are well known mass analyzers with very high resolving power. This resolving power is achieved with help of ions orbiting around an inner electrode for long time, in general up to a few seconds, since the mass signal is obtained by calculating the Fourier Transform of the induced signal caused by the ion motion. A similar principle is applied in the Cassinian Ion Trap of second order, where the ions move in a periodic pattern in-between two inner electrodes. The Cassinian ion trap has the potential to offer mass resolving power comparable to the Orbitrap with advantages regarding the experimental implementation. In this paper we have investigated the details of the ion motion analyzing experimental data and the results of different numerical methods, with focus on increasing the resolving power by increasing the oscillation frequency for ions in a high field ion trap. In this context the influence of the trap door, a tunnel through which the ions are injected into the trap, on the ion velocity becomes especially important.