Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.

Enhancing the light-emitting performance and stability in CsPbBr3 perovskite quantum dots via simultaneous doping and surface passivation

Inorganic perovskite CsPbBr3 quantum dots (QDs) have emerged as a promising candidate for optoelectronic applications due to their narrow emission and color purity, among other things.

A NiCo2S4@N/S–CeO2 composite as an electrocatalytic signal amplification label for aptasensing

Herein, we designed a NiCo2S4@N/S–CeO2 composite with amplified electrocatalytic oxygen reduction (OR) capability by the in situ growth of NiCo2S4 nanoparticles on CeO2 nanospheres with simultaneous doping of nitrogen and sulfur.