Phase relations in the CuI-SbSI-SbI3 composition range of the Cu–Sb–S–I quaternary system

The phase equilibria in the Cu-Sb-S-I quaternary system were studied by differential thermal analysis and X-ray phase analysis methods in the CuI-SbSI-SbI3 concentration intervals. The boundary quasi-binary section CuI-SbSI, 2 internal polythermal sections of the phase diagram, as well as, the projection of the liquidus surface were constructed. Primary crystallisation areas of phases, types, and coordinates of non- and monovariant equilibria were determined. Limited areas of solid solutions based on the SbSI (b-phase) and high-temperature modifications of the CuI (α1- and α2- phases) were revealed in the system. The formation of the α1 and α2 phases is accompanied by a decrease in the temperatures of the polymorphic transitions of CuI and the establishment of metatectic (3750C) and eutectoid (2800C) reactions. It was also shown, that the system is characterised by the presence of a wide immiscibility region that covers a significant part of theliquidus surface of the CuI and SbSI based phases

Liquidus surface of the quasi-ternary system Cu2S–In2S3–FeS

A projection of the liquidus surface of the quasi-ternary system Cu2S-In2S3-FeS was constructed as a result of experimental studies of quasi-binary and non-quasi-binary sections and based on the data on binary systems comprising a ternary system.Each section (six quasi-binary and four non-quasi-binary ones) was studied separately using complex methods of physicochemical analysis: differential thermal analysis, X-ray phase analysis, and microstructural analysis.It was found that the quasi-ternary system Cu2S-In2S3-FeS has six fields of primary crystallisation of separate phases and eleven monovariant equilibrium curves along which two phases are co-crystallised. Non-variant equilibrium points were obtained through the extrapolation of the direction of monovariant equilibrium curves.The quasi-ternary system Cu2S-In2S3-FeS is characterised by 17 non-variant equilibrium points, where Е1-Е5 are triple eutectic points.The projection diagram of the liquidus surface is characterised by three crystallisation fields of the initial componets (Cu2S, In2S3, FeS), four fields of binary compounds, and one field of a complex compound (CuFeIn3S6).Since complete solubility of the initial components in liquid and solid states is observed in the quasi-binary section CuIn5S8‑FeIn2S4, the fields of primary crystallisation of CuIn5S8 and FeIn2S4 are absent; they are replaced by an unlimited solid solution based on these components.The fields of primary crystallisation of Cu2S, FeS, and CuInS2 are the most extensive in the ternary system Cu2S-In2S3-FeS. The reactions occurring at monovariant equilibrium points are presented.

Crystallisation Phenomena of In2O3:H Films

The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

Thermal analysis of (NaF/AlF3)-FeF3 and (NaF/AlF3)-FeO systems

Thermal analysis of the two systems, (NaF/AlF3)-FeF3 and (NaF/AlF3)-FeO, was carried out with three different cryolite ratios. In these systems, “impurity compounds” decreased the temperature of primary crystallisation with decreasing cryolite ratios. From the slope of the dependencies, it can be assumed that the excess of AlF3 plays a more significant role in changes in the “Fe(III)” systems than in “Fe(II)” systems.

On the Liquidus Surface and Reaction Scheme of the Ternary System Cu-Si-Ti

The ternary system Cu-Si-Ti was investigated using XRD, SEM-EDX, and DTA. The existence of two ternary phases τ1-CuSiTi and τ2-TiSi2-xCux as well as their crystal structures are confirmed. The isothermal section at 800°C is corroborated. From DTA data of equilibrated alloys a reaction scheme linking the isotherm at 700°C with the liquidus surface is derived. Using data on primary crystallisation of as cast alloys a projection of the liquidus surface is proposed.