scholarly journals Crystallisation Phenomena of In2O3:H Films

Materials ◽  
2019 ◽  
Vol 12 (2) ◽  
pp. 266 ◽  
Author(s):  
Ruslan Muydinov ◽  
Alexander Steigert ◽  
Markus Wollgarten ◽  
Paweł Michałowski ◽  
Ulrike Bloeck ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Oxidation Process ◽  
Ambient Air ◽  
Free Electrons ◽  
Higher Temperature ◽  
Sputter Deposited ◽  
Electron Energy Loss ◽  
Secondary Ion ◽  
Primary Crystallisation

The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

Thermal stability of carbon nitride thin films

2001 ◽  
Vol 16 (11) ◽  
pp. 3188-3201 ◽  
Author(s):  
Niklas Hellgren ◽  
Nian Lin ◽  
Esteban Broitman ◽  
Virginie Serin ◽  
Stefano E. Grillo ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Amorphous Structure ◽  
X Ray ◽  
Bonding Structure ◽  
Higher Temperature ◽  
Electron Energy Loss ◽  
Thermal Stability Of

The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

The Effects of Nano-SiO2 on the Chemical Composition of Layers on Aluminum Alloy by Micro-Arc Oxidation

2014 ◽  
Vol 628 ◽  
pp. 84-88
Author(s):  
Xiang Bo Suo ◽  
Ji Qiu ◽  
Shi Ning Ma ◽  
Hong Mei Wang
Keyword(s):  
Aluminum Alloy ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Oxidation Process ◽  
Arc Discharge ◽  
Chemical Compositions ◽  
X Ray ◽  
7A52 Aluminum Alloy ◽  
Micro Arc Oxidation ◽  
Higher Temperature

In this article, a nano-SiO2/micro-arc oxide composite coating layer was prepared on the surface of 7A52 Aluminum alloy by addition of SiO2 nanoparticles into the micro-arc oxidation electrolyte to enhance the performance of the formed oxidative layer. Then, the composite oxidative layer was characterized by X-ray Photoelectron Spectroscopy (XPS) to investigate its elemental and chemical compositions, as well as their respective distributions. The results revealed that at elevated temperatures resulted from micro-arc discharge, the SiO2 in the composite reacted with Al2O3 (the major content of the micro-arc oxidative layer) to form a new compound known as mullite. In addition, the contents of SiO2 and γ-Al2O3 in the inner layer of the oxidative layer were lower than those in the surface layer. This can be explained by the higher temperature in the inner layer which motivated the formation of mullite and α-Al2O3 from SiO2 and γ-Al2O3 respectively during the micro-arc oxidation process.

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

2007 ◽  
Vol 353-358 ◽  
pp. 1871-1874 ◽  
Author(s):  
Kun Xue ◽  
Li Sha Niu ◽  
Hui Ji Shi ◽  
Ji Wen Liu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Region ◽  
Ambient Air ◽  
Annealed Sample ◽  
Silicon Oxycarbide ◽  
Near Surface ◽  
X Ray ◽  
Sputter Deposited ◽  
Extended Exposure ◽  
Sic Films

Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

Microchemical imaging in biomedical research

1992 ◽  
Vol 50 (2) ◽  
pp. 1118-1119
Author(s):  
P. Ingram
Keyword(s):  
Data Analysis ◽  
Electron Probe ◽  
The Other ◽  
X Ray ◽  
Cell Element ◽  
Physiological Information ◽  
Functional States ◽  
Elemental Maps ◽  
Electron Energy Loss ◽  
Secondary Ion

It is well established that unique physiological information can be obtained by rapidly freezing cells in various functional states and analyzing the cell element content and distribution by electron probe x-ray microanalysis. (The other techniques of microanalysis that are amenable to imaging, such as electron energy loss spectroscopy, secondary ion mass spectroscopy, particle induced x-ray emission etc., are not addressed in this tutorial.) However, the usual processes of data acquisition are labor intensive and lengthy, requiring that x-ray counts be collected from individually selected regions of each cell in question and that data analysis be performed subsequent to data collection. A judicious combination of quantitative elemental maps and static raster probes adds not only an additional overall perception of what is occurring during a particular biological manipulation or event, but substantially increases data productivity. Recent advances in microcomputer instrumentation and software have made readily feasible the acquisition and processing of digital quantitative x-ray maps of one to several cells.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

1996 ◽  
Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting Diode ◽  
Elevated Concentration ◽  
Forward Voltage ◽  
Light Emitting ◽  
Intermittent Yield ◽  
Si Doped ◽  
Secondary Ion ◽  
Furnace Pressure

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.

scholarly journals Wear Resistance Improvement of Cemented Tungsten Carbide Deep-Hole Drills after Ion Implantation

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 239
Author(s):  
Dmitrij Morozow ◽  
Marek Barlak ◽  
Zbigniew Werner ◽  
Marcin Pisarek ◽  
Piotr Konarski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Tungsten Carbide ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Layer ◽  
Hole Drilling ◽  
Deep Hole ◽  
Tungsten Nitrides ◽  
Lubrication Effect ◽  
Secondary Ion

The paper is dedicated to the lifetime prolongation of the tools designed for deep-hole drilling. Among available methods, an ion implantation process was used to improve the durability of tungsten carbide (WC)-Co guide pads. Nitrogen fluencies of 3 × 1017 cm−2, 4 × 1017 cm−2 and 5 × 1017 cm−2 were applied, and scanning electron microscope (SEM) observations, energy dispersive spectroscopy (EDS) analyses, X-ray photoelectron spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements were performed for both nonimplanted and implanted tools. The durability tests of nonimplanted and the modified tools were performed in industrial conditions. The durability of implanted guide pads was above 2.5 times more than nonimplanted ones in the best case, presumably due to the presence of a carbon-rich layer and extremely hard tungsten nitrides. The achieved effect may be attributed to the dissociation of tungsten carbide phase and to the lubrication effect. The latter was due to the presence of pure carbon layer with a thickness of a few dozen nanometers. Notably, this layer was formed at a temperature of 200 °C, much smaller than in previously reported research, which makes the findings even more valuable from economic and environmental perspectives.

scholarly journals Impact of high temperatures on aluminoceladonite studied by Mössbauer, Raman, X-ray diffraction and X-ray photoelectron spectroscopy

2021 ◽  
Author(s):  
Mariola Kądziołka-Gaweł ◽  
Maria Czaja ◽  
Mateusz Dulski ◽  
Tomasz Krzykawski ◽  
Magdalena Szubka
Keyword(s):  
Photoelectron Spectroscopy ◽  
Integral Intensity ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
Structural Reorganization ◽  
Oh Groups ◽  
X Ray ◽  
Al Content ◽  
Integral Intensity Ratio ◽  
Higher Temperature

AbstractMössbauer, Raman, X-ray diffraction and X-ray photoelectron spectroscopies were used to examine the effects of temperature on the structure of two aluminoceladonite samples. The process of oxidation of Fe2+ to Fe3+ ions started at about 350 °C for the sample richer in Al and at 300 °C for the sample somewhat lower Al-content. Mössbauer results show that this process may be associated with dehydroxylation or even initiate it. The first stage of dehydroxylation takes place at a temperature > 350 °C when the adjacent OH groups are replaced with a single residual oxygen atom. Up to ~500 °C, Fe ions do not migrate from cis-octahedra to trans-octahedra sites, but the coordination number of polyhedra changes from six to five. This temperature can be treated as the second stage of dehydroxylation. The temperature dependence on the integral intensity ratio between bands centered at ~590 and 705 cm−1 (I590/I705) clearly reflects the temperature at which six-coordinated polyhedra are transformed into five-coordinated polyhedra. X-ray photoelectron spectra obtained in the region of the Si2p, Al2p, Fe2p, K2p and O1s core levels, highlighted a route to identify the position of Si, Al, K and Fe cations in a structure of layered silicates with temperature. All the measurements show that the sample with a higher aluminum content and a lower iron content in octahedral sites starts to undergo a structural reorganization at a relatively higher temperature than the less aluminum-rich sample does. This suggests that iron may perform an important role in the initiation of the dehydroxylation of aluminoceladonites.

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