Effect of Mo and Ta on the Mechanical and Superelastic Properties of Ti-Nb Alloys Prepared by Mechanical Alloying and Spark Plasma Sintering

The effect of ternary alloying elements (Mo and Ta) on the mechanical and superelastic properties of binary Ti-14Nb alloy fabricated by the mechanical alloying and spark plasma sintering was investigated. The materials were prepared in two ways: (i) by substituting Nb in base Ti-14Nb alloy by 2 at.% of the ternary addition, giving the following compositions: Ti-8Nb-2Mo and Ti-12Nb-2Ta and (ii) by adding 2 at.% of the ternary element to the base alloy. The microstructures of the materials consisted of the equiaxed β-grains and fine precipitations of TiC. The substitution of Nb by both Mo and Ta did not significantly affect the mechanical properties of the base Ti-14Nb alloy, however, their addition resulted in a decrease of yield strength and increase of plasticity. This was associated with the occurrence of the {332} <113> twinning that was found during the in-situ observations. The elevated concentration of interstitial elements (oxygen and carbon) lead to the occurrence of stress-induced martensitic transformation and twinning mechanisms at lower concentration of β-stabilizers in comparison to the conventionally fabricated materials. The substitution of Nb by Mo, and Ta caused the slight improvement of the superelastic properties of the base Ti-14Nb alloy, whereas their addition deteriorated the superelasticity.

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation

The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 μWcm−1 K−2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.