Localization-delocalization transition in disordered one-dimensional exciton-polariton system

The transition from the delocalized to the localized state has been investigated in a quasi-onedimensional exciton-polariton system excited nonresonantly in GaAs-based microcavity wire with disordered potential. The photoexcited polariton condensate has been found to spread along the wire with а velocity exceeding 1 μm/ps. The propagation along the wire is provided by high energy polaritons. The LP localization length decreases with decreasing blue shift of LPs in the excited spot. The polariton condensate returns to the Bose glass state when the blue shift of the LP resonance at the excitation spot decreases below the critical level that depends on the potential disorder.

Optical crosstalk in SPAD arrays for high-throughput single-molecule fluorescence spectroscopy

Single-molecule fluorescence spectroscopy (SMFS), based on the detection of individual molecules freely diffusing through the excitation spot of a confocal microscope, has allowed unprecedented insights into biological processes at the molecular level, but suffers from limited throughput. We have recently introduced a multispot version of SMFS, which allows achieving high-throughput SMFS by virtue of parallelization, and relies on custom silicon single-photon avalanche diode (SPAD) detector arrays. Here, we examine the premise of this parallelization approach, which is that data acquired from different spots is uncorrelated. In particular, we measure the optical crosstalk characteristics of the two 48-SPAD arrays used in our recent SMFS studies, and demonstrate that it is negligible (crosstalk probability ≤ 1.1 10−3) and is undetectable in cross-correlation analysis of actual single-molecule fluorescence data.

3D fluorescence emission difference microscopy based on spatial light modulator

We report three-dimensional fluorescence emission difference (3D-FED) microscopy using a spatial light modulator (SLM). Zero phase, 0–2[Formula: see text] vortex phase and binary 0-pi phase are loaded on the SLM to generate the corresponding solid, doughnut and z-axis hollow excitation spot, respectively. Our technique achieves super-resolved image by subtracting three differently acquired images with proper subtractive factors. Detailed theoretical analysis and simulation tests are proceeded to testify the performance of 3D-FED. Also, the improvement of lateral and axial resolution is demonstrated by imaging 100[Formula: see text]nm fluorescent beads. The experiment yields lateral resolution of 140[Formula: see text]nm and axial resolution of approximate 380[Formula: see text]nm.

RESONANT RAYLEIGH SCATTERING OF LIGHT BY SEMICONDUCTOR MICROCAVITY

Experimental study of Resonant Rayleigh Scattering (RRS) of light by a semiconductor microcavity was carried out on a double cavity sample. The shifts of RRS lines spectral positions with sample rotation demonstrate clearly polariton dispersion. The shape of the lines depends strongly on the position of the excitation spot on the structure surface and temperature. The treatment of experimental data in terms of the Fano quantum mechanical interference between a discreet state and continuum gives a direct method to study polariton scattering probabilities.

Grains of Porous Silicon Embedded in SiO2:Studies of Optical Gain and Electroluminescence

Recent reports on experimental observation of optical gain in silicon nanostructures in the visible region, performed at several laboratories all over the world, have triggered an extraordinary surge of interest in silicon lasing. However, attempts aimed at reproducing the red stimulated emission from „standard“silicon nanocrystals (sized 3-5 nm) at some other laboratories either failed, or. did not come to definite conclusions. Therefore, more detailed measurements of optical gain in a wider variety of samples containing Si nanocrystals are required in order to unravel whether or not the observation of optical gain is an intrinsic property of Si nanocrystals. We have performed a detailed study of optical gain in layers of densely packed Si nanocrystals in SiO2, prepared on the basis of porous Si, using the variable-stripe-length (VSL) method in combination with the shifted-excitation-spot (SES) method. In selected samples we have observed a distinct difference in behaviour between VSL and SES curves, indicating the occurrence of positive optical gain of ~ 24 cm-1. Preliminary reports on transport and electroluminescence measurements in thin films of SiO2 doped with porous silicon grains, prepared by spin-coating technique, are also discussed.