Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04

Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345572 ◽

2005 ◽

Cited By ~ 9

Author(s):

G. Groeseneken ◽

L. Pantisano ◽

L.-A. Ragnarsson ◽

R. Degraeve ◽

M. Houssa ◽

...

Keyword(s):

Gate Dielectrics ◽

Electrical Performance ◽

High K

Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345558 ◽

2005 ◽

Cited By ~ 1

Author(s):

R.S.C. Wang ◽

R.S.J. Shen ◽

C.C.H. Hsu

Keyword(s):

Non Volatile Memory ◽

Volatile Memory

Integration of top metal layer with thick Cu/Black Diamond/spl trade/ (BD)

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345641 ◽

2005 ◽

Author(s):

Guo Lihui ◽

J.S.Y. Jie

Keyword(s):

Metal Layer

Packaging process induced retention degradation of 256 Mbit DRAM with negative wordline bias

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345636 ◽

2005 ◽

Author(s):

Minchen Chang ◽

Jengping Lin ◽

Ruey Dar Chang ◽

S.N. Shih ◽

Chao-Sung Lai ◽

...

Keyword(s):

Packaging Process

Chairmen's message

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345512 ◽

2005 ◽

Author(s):

J.M. Shyu ◽

S.S. Chung

The leakage current study on Cu/TaSi/sub x//porous silica damascene structures

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345541 ◽

2005 ◽

Author(s):

Chung-Hsien Chen ◽

Fon-Shan Huang

Keyword(s):

Leakage Current ◽

Porous Silica

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345565 ◽

2005 ◽

Author(s):

S.C. Lai ◽

C.W. Tsai ◽

C.T. Yen ◽

C.L. Liu ◽

S.Y. Lee ◽

...

Keyword(s):

High Speed ◽

Low Voltage ◽

Ferroelectric Memory

Ultra-thin SiON and high-k HfO/sub 2/ gate dielectric metrology using transmission electron microscopy

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345569 ◽

2004 ◽

Author(s):

A.Y. Du ◽

C.H. Tung ◽

B.H. Freitag ◽

W.Y. Zhang ◽

S. Lim ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Gate Dielectric ◽

Transmission Electron ◽

High K

Thermal laser stimulation effects on NMOS transistor

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345557 ◽

2004 ◽

Cited By ~ 1

Author(s):

A. Firiti ◽

G. Haller ◽

D. Lewis ◽

P. Fouillat ◽

P. Perdu ◽

...

Keyword(s):

Nmos Transistor ◽

Laser Stimulation

Hot carrier degradation in LDMOS power transistors

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04 ◽

10.1109/ipfa.2004.1345626 ◽

2004 ◽

Cited By ~ 4

Author(s):

Chih-Chang Cheng ◽

J.W. Wu ◽

C.C. Lee ◽

J.H. Shao ◽

T. Wang

Keyword(s):

Hot Carrier ◽

Power Transistors ◽

Hot Carrier Degradation

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)

Integration of top metal layer with thick Cu/Black Diamond/spl trade/ (BD)

Packaging process induced retention degradation of 256 Mbit DRAM with negative wordline bias

Chairmen's message

The leakage current study on Cu/TaSi/sub x//porous silica damascene structures

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

Ultra-thin SiON and high-k HfO/sub 2/ gate dielectric metrology using transmission electron microscopy

Thermal laser stimulation effects on NMOS transistor

Hot carrier degradation in LDMOS power transistors

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Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)

Integration of top metal layer with thick Cu/Black Diamond/spl trade/ (BD)

Packaging process induced retention degradation of 256 Mbit DRAM with negative wordline bias

Chairmen's message

The leakage current study on Cu/TaSi/sub x//porous silica damascene structures

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

Ultra-thin SiON and high-k HfO/sub 2/ gate dielectric metrology using transmission electron microscopy

Thermal laser stimulation effects on NMOS transistor

Hot carrier degradation in LDMOS power transistors

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA 2004 (IEEE Cat No 04TH8743) IPFA-04
Latest Publications