The leakage current study on Cu/TaSi/sub x//porous silica damascene structures

2005 ◽  
Author(s):  
Chung-Hsien Chen ◽  
Fon-Shan Huang
Keyword(s):  
Leakage Current ◽  
Porous Silica

Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica (k= 2.1)/Cu Interconnect Structure

2010 ◽  
Vol 49 (5) ◽  
pp. 05FD02 ◽  
Author(s):  
Akifumi Gawase ◽  
Shinichi Chikaki ◽  
Naofumi Nakamura ◽  
Eiichi Soda ◽  
Noriaki Oda ◽  
...  
Keyword(s):  
Leakage Current ◽  
Porous Silica ◽  
On Line ◽  
Cu Interconnect

The Leakage Current Conduction Mechanisms of Cu/Porous Silica Damascene Schemes with Nano-cluster TaSixBarrier

2005 ◽  
Vol 44 (1A) ◽  
pp. 102-107 ◽  
Author(s):  
Chung-Hsien Chen ◽  
Chin-Piao Chang ◽  
Fon-Shan Huang
Keyword(s):  
Leakage Current ◽  
Porous Silica ◽  
Conduction Mechanisms ◽  
Current Conduction ◽  
Nano Cluster

Ionic Conduction Leakage Current in Porous Silica Films

2006 ◽  
Author(s):  
Yasuhisa Kayaba ◽  
Kazuo Kohmura ◽  
Takamaro Kikkawa
Keyword(s):  
Leakage Current ◽  
Ionic Conduction ◽  
Porous Silica ◽  
Silica Films

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

2008 ◽  
Vol 128 (6) ◽  
pp. 885-889
Author(s):  
Kazuki Nomoto ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Ion Implanted

TMR Magnetic Sensor Array Module for Detecting Leakage Current in Lithium-ion Batteries

2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Leakage Current ◽  
Sensor Array ◽  
Lithium Ion ◽  
Magnetic Sensor

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

2010 ◽  
Vol 130 (11) ◽  
pp. 1037-1041 ◽  
Author(s):  
Takuma Miyake ◽  
Yuya Seo ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo
Keyword(s):  
Leakage Current

SiO2 Entrapment of Animal Cells for Hybrid Bioartificial Organs

2000 ◽  
Vol 628 ◽  
Author(s):  
Giovanni Carturan ◽  
Renzo Dal Monte ◽  
Maurizio Muraca
Keyword(s):  
Gas Phase ◽  
Mechanical Stability ◽  
Porous Silica ◽  
Collagen Matrix ◽  
Homogeneous Layer ◽  
Animal Cells ◽  
Bioartificial Organs ◽  
Liver And Pancreas ◽  
Encapsulation Method ◽  
Metabolic Activities

ABSTRACTSi-alkoxides in gas phase are reactive towards the surface of animal cells, depositing a homogeneous layer of porous silica. This encapsulation method preserves cell viability and does not alter the hindrance of the biological load.In the prospective use for the design of a hybrid bioartificial liver, hepatocytes in a collagen matrix can be entrapped by the siliceous deposit which provides definite mechanical stability to the collagen matrix and molecular cutoff vs. high molecular weight proteins, including immunoglobulins. The functionality of the encapsulated cell load is maintained for the expressions of typical liver and pancreas metabolic activities.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

SIMULATION OF THE INTERDEVICE LEAKAGE CURRENT UNDERNEATH THICK ISOLATION OXIDES IN CMOS FPGAS

2017 ◽  
Vol 21 (4) ◽  
pp. 325-331
Author(s):  
Maxim G. Drosdetsky ◽  
V. V. Orlov ◽  
G. I. Zebrev ◽  
Vladimir M. Maslowsky
Keyword(s):  
Leakage Current
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