Angle-resolved tunneling spectroscopy of Si conduction band using bonded Si(111) wafer pair

2001 ◽  
pp. 144-145
Author(s):  
A. Kazama ◽  
H. Bando ◽  
Y. Miyahara ◽  
H. Enomoto ◽  
H. Ozaki
Keyword(s):  
Conduction Band ◽  
Tunneling Spectroscopy ◽  
Wafer Pair

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

Tunneling Spectroscopy of Magnetic Impurities (=Mn,Fe,Co) in ZnO

2007 ◽  
Vol 1035 ◽  
Author(s):  
Takashi Tamura ◽  
Changman Kim ◽  
Yasushi Oikawa ◽  
Hajime Ozaki
Keyword(s):  
Fermi Level ◽  
Theoretical Calculation ◽  
Conduction Band ◽  
Density Of States ◽  
Tunneling Spectroscopy ◽  
Magnetic Impurities ◽  
Electronic Density ◽  
Doped Zno ◽  
Recent Theoretical Calculation ◽  
Co Doped

AbstractThe first observations have been made on the electronic density of states of Mn, Co and Fe-doped ZnO by tunneling spectroscopy. For Mn- and Co-doped ZnO, rising of DOS were observed around 2.8eV and 3.2eV below the bottom of the conduction band, respectively. In these cases, the Fermi level lay at the bottom of the conduction band. For Fe-doped ZnO, the DOS with about 1.2eV width was observed around the Fermi level in the mid-gap. The result reproduced the recent theoretical calculation.

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex Band Structure

2000 ◽  
Vol 15 (6) ◽  
pp. 1257-1260 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1−xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it was difficult to determine the conduction band edge at the interface of the Si1−xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

Tunneling spectroscopy in the Charge-Density Wave conductor NbSe3

2004 ◽  
Vol 114 ◽  
pp. 135-136 ◽  
Author(s):  
E. Slot ◽  
K. O'Neill ◽  
H. S.J. van der Zant ◽  
R. E. Thorne
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Tunneling Spectroscopy

Tunneling spectroscopy of quasi-two-dimensional plasmons

2001 ◽  
Vol 171 (12) ◽  
pp. 1368
Author(s):  
V.A. Volkov ◽  
E.E. Takhtamirov ◽  
D.Yu. Ivanov ◽  
Yu.V. Dubrovskii ◽  
L. Eaves ◽  
...  
Keyword(s):  
Tunneling Spectroscopy ◽  
Two Dimensional

Scanning-tunneling spectroscopy on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  
Keyword(s):  
Polymer Films ◽  
Conjugated Polymer ◽  
Three Dimensional ◽  
Field Enhancement ◽  
Direct Consequence ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Band Alignment ◽  
Scanning Tunneling ◽  
Order Of Magnitude

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.

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