A new concept of a high-current power module allowing paralleling of many SiC devices assembled exploiting conventional packaging technologies

2016 ◽  
Author(s):  
Slavo Kicin ◽  
Felix Traub ◽  
Samuel Hartmann ◽  
Enea Bianda ◽  
Christof Bernhard ◽  
...  
Keyword(s):  
High Current ◽  
Power Module

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Pin Diode ◽  
High Current ◽  
Power Module ◽  
Temperature Dependent ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Chip Size ◽  
Switching Characteristics ◽  
Vf Drift

Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.

scholarly journals Optimized Design of Low Voltage High Current Ferrite Planar Inductor for 10 MHz On-chip Power Module

2008 ◽  
Vol 13 (2) ◽  
pp. 37-42 ◽  
Author(s):  
Seok Bae ◽  
Yang-Ki Hong ◽  
Jae-Jin Lee ◽  
Gavin Abo ◽  
Jeevan Jalli ◽  
...  
Keyword(s):  
Low Voltage ◽  
Optimized Design ◽  
High Current ◽  
Power Module ◽  
On Chip

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
James Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
High Current ◽  
Power Module ◽  
Pin Diodes

An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules

2019 ◽  
Vol 963 ◽  
pp. 855-858 ◽  
Author(s):  
Alessandro Borghese ◽  
Antonio Pio Catalano ◽  
Michele Riccio ◽  
Lorenzo Codecasa ◽  
Asad Fayyaz ◽  
...  
Keyword(s):  
Optimization Procedure ◽  
High Current ◽  
Power Module ◽  
High Demand ◽  
Simulation Methodology ◽  
Efficient Simulation ◽  
Power Modules ◽  
The Impact

Despite their growing adoption in a variety of applications, SiC MOSFETs are generally not available at high current rating. Therefore, there is a high demand for power modules exploiting configurations based on parallel devices. However, these products still need optimization in order to ensure long-term reliability. This paper presents a methodology relying on fast electrothermal simulations aimed at aiding this optimization procedure. The proposed approach is applied to a power module in which the parallel MOSFETs are realistically subject to mismatched parameters.

Spatial resolution of X-ray microanalysis in thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 544-545
Author(s):  
R. Hutchings ◽  
I.P. Jones ◽  
M.H. Loretto ◽  
R.E. Smallman
Keyword(s):  
Spatial Resolution ◽  
Electron Probe ◽  
Beam Divergence ◽  
Inelastic Interaction ◽  
Specimen Thickness ◽  
High Current ◽  
Beam Spreading ◽  
X Ray ◽  
Thin Foils ◽  
Complex Calculation

There is increasing interest in X-ray microanalysis of thin specimens and the present paper attempts to define some of the factors which govern the spatial resolution of this type of microanalysis. One of these factors is the spreading of the electron probe as it is transmitted through the specimen. There will always be some beam-spreading with small electron probes, because of the inevitable beam divergence associated with small, high current probes; a lower limit to the spatial resolution is thus 2αst where 2αs is the beam divergence and t the specimen thickness.In addition there will of course be beam spreading caused by elastic and inelastic interaction between the electron beam and the specimen. The angle through which electrons are scattered by the various scattering processes can vary from zero to 180° and it is clearly a very complex calculation to determine the effective size of the beam as it propagates through the specimen.

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