Proceedings of 1993 IEEE International SOI Conference
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Electron trapping in SIMOX with supplemental implant

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344587 ◽

2002 ◽

Author(s):

R.J. Lambert ◽

T.N. Bhar ◽

H.L. Hughes

Keyword(s):

Electron Trapping

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High dose response of as-grown SIMOX substrates

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344596 ◽

2002 ◽

Cited By ~ 2

Author(s):

O. Flament ◽

P. Paillet ◽

D. Herve ◽

O. Musseau ◽

J.L. Leray ◽

...

Keyword(s):

Dose Response ◽

High Dose

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Inversion electron effective mobility in SOI NMOSFETs

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344567 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.J. Sherony ◽

L.T. Su ◽

J.E. Chung ◽

D.A. Antoniadis

Keyword(s):

Effective Mobility

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Crystallographic effects in implantation of oxygen for SIMOX

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344599 ◽

2002 ◽

Author(s):

M.J. Anc ◽

B.F. Cordts ◽

L.P. Allen ◽

W.A. Krull ◽

M.A. Guerra

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Annealing characteristics of radiation induced leakage in SOS MOSFETs

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344580 ◽

2002 ◽

Author(s):

E.Y. Chao ◽

C. Hu ◽

S. Wu ◽

G.P. Li ◽

P. Liu ◽

...

Keyword(s):

Radiation Induced

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Non-local modeling of impact ionization for optimal device/circuit design in fully depleted SOI CMOS technology

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344570 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Krishnan ◽

J.G. Fossum

Keyword(s):

Circuit Design ◽

Impact Ionization ◽

Cmos Technology ◽

Fully Depleted ◽

Local Modeling ◽

Non Local ◽

Soi Cmos

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Photo-injection studies of buried oxide layers in SIMOX and BESOI structures

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344608 ◽

2002 ◽

Cited By ~ 1

Author(s):

A.G. Revesz ◽

V.V. Afanas'ev ◽

H.L. Hughes

Keyword(s):

Oxide Layers ◽

Buried Oxide

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Silicon on diamond heat sinks by bonding and etch back

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344593 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Soderbarg ◽

B. Edholm ◽

J. Olsson ◽

S. Tiensuu ◽

E. Johansson

Keyword(s):

Heat Sinks

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An AFM study of surface morphology of commercial 6" SOI wafers

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344548 ◽

2002 ◽

Author(s):

T.R. Neal ◽

P.C. Karulkar

Keyword(s):

Surface Morphology

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Measurement of minority carrier diffusion length and lifetime in SOI devices by flying spot laser scanner as a function of residual misfit

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344600 ◽

2002 ◽

Author(s):

H. Baumgart ◽

R. Egloff ◽

E. Arnold ◽

T.J. Letavic ◽

S. Merchant ◽

...

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Laser Scanner ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Soi Devices ◽

Flying Spot

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Proceedings of 1993 IEEE International SOI ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electron trapping in SIMOX with supplemental implant

High dose response of as-grown SIMOX substrates

Inversion electron effective mobility in SOI NMOSFETs

Crystallographic effects in implantation of oxygen for SIMOX

Annealing characteristics of radiation induced leakage in SOS MOSFETs

Non-local modeling of impact ionization for optimal device/circuit design in fully depleted SOI CMOS technology

Photo-injection studies of buried oxide layers in SIMOX and BESOI structures

Silicon on diamond heat sinks by bonding and etch back

An AFM study of surface morphology of commercial 6" SOI wafers

Measurement of minority carrier diffusion length and lifetime in SOI devices by flying spot laser scanner as a function of residual misfit

Proceedings of 1993 IEEE International SOI Conference
Latest Publications