Two-dimensional simulation of negative resistance effects using quantum moment equations

Author(s):  
F. Vazquez ◽  
M. Ogura ◽  
A. Strachan ◽  
R. Cottle
2013 ◽  
Vol 562-565 ◽  
pp. 465-470 ◽  
Author(s):  
Xiao Feng Zhao ◽  
Lei Li ◽  
Ping Wang ◽  
Dian Zhong Wen ◽  
Gang Li

According to the experimental results of the long-base silicon magnetic sensitive diode, this paper adopted ATLAS software to establish the two dimensional simulation model in order to research the negative resistance characteristics of the long-base silicon magnetic sensitive diode. Deep impurities were introduced into the long base to study the effect of the concentration and the distribution of deep impurities on the current-voltage characteristics of the long-base silicon magnetic sensitive diode. The simulation results showed that the deep impurity in the long base was the main factor that impacted on the negative resistance characteristics of the long-base silicon magnetic sensitive diode.


2018 ◽  
Author(s):  
Haibo Li ◽  
Maocheng Tian ◽  
Xiaohang Qu ◽  
Min Wei

AIP Advances ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 055209
Author(s):  
Yong Che ◽  
Qing Zang ◽  
Xiaofeng Han ◽  
Shumei Xiao ◽  
Kai Huang ◽  
...  

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