Proceedings of 1994 VLSI Technology Symposium
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A novel disposable post technology for self-aligned sub-micron contacts

2002 ◽  
Author(s):  
M. Cleeves ◽  
K. Ramkumar ◽  
R. Gettle

High speed sub-halfmicron flash memory technology with simple stacked gate structure cell

2002 ◽  
Author(s):  
S. Mori ◽  
E. Sakagami ◽  
Y. Yamaguchi ◽  
E. Kamiya ◽  
M. Tanimoto ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Speed ◽  
Gate Structure

A low donor concentration retrograde profile Si bipolar transistor for low-temperature BiCMOS LSI's

2002 ◽  
Author(s):  
K. Imai ◽  
Y. Kinoshita ◽  
T. Yamazaki ◽  
T. Tatsumi ◽  
T. Tashiro
Keyword(s):  
Low Temperature ◽  
Bipolar Transistor ◽  
Donor Concentration

1/f noise in poly-Si MOSFET and strong correlation with oxide traps and grain boundaries

2002 ◽  
Author(s):  
T. Hashimoto ◽  
M. Aoki ◽  
T. Yamanaka ◽  
Y. Kamigaki ◽  
T. Nishida
Keyword(s):  
Grain Boundaries ◽  
Strong Correlation ◽  
Oxide Traps

New buried channel FLASH memory cell with symmetrical source/drain structure for 64 Mbit or beyond

2002 ◽  
Author(s):  
H. Oda ◽  
S. Ueno ◽  
M. Inuishi ◽  
N. Tsubouchi
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Buried Channel ◽  
Flash Memory Cell

Temperature and channel-length dependence of impact ionization in p-channel MOSFETs

2002 ◽  
Author(s):  
M. Mastrapasqua ◽  
J. Bude ◽  
M. Pinto ◽  
L. Manchanda ◽  
K.F. Lee
Keyword(s):  
Impact Ionization ◽  
Channel Length ◽  
Length Dependence
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