Temperature and channel-length dependence of impact ionization in p-channel MOSFETs

2002 ◽  
Author(s):  
M. Mastrapasqua ◽  
J. Bude ◽  
M. Pinto ◽  
L. Manchanda ◽  
K.F. Lee
Keyword(s):  
Impact Ionization ◽  
Channel Length ◽  
Length Dependence

scholarly journals Channel-length dependence of particle diffusivity in confinement

Soft Matter ◽  
2021 ◽  
Author(s):  
Soichiro Tottori ◽  
Karolis Misiunas ◽  
Vahe Tshitoyan ◽  
Ulrich Keyser
Keyword(s):  
Channel Length ◽  
Fundamental Importance ◽  
Large Molecules ◽  
Diffusive Behavior ◽  
Channel Proteins ◽  
Length Dependence

Understanding the diffusive behavior of particles and large molecules in channels is of fundamental importance in biological and synthetic systems, such as channel proteins, nanopores, and nanofluidics. Although theoretical and...

Dynamics, Design, and Application of a Silicon-on-Insulator Technology Based Neuron

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3347-3357
Author(s):  
S. Dutta ◽  
T. Chavan ◽  
S. Shukla ◽  
V. Kumar ◽  
A. Shukla ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Threshold Current ◽  
Channel Length ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Classification Problems ◽  
Floating Body Effect ◽  
Leakage Mechanism ◽  
Silicon Based ◽  
Length Scaling

Abstract:Spiking Neural Networks propose to mimic nature’s way of recognizing patterns and making decisions in a fuzzy manner. To develop such networks in hardware, a highly manufacturable technology is required. We have proposed a silicon-based leaky integrate and fire (LIF) neuron, on a sufficiently matured 32 nm CMOS silicon-on-insulator (SOI) technology. The floating body effect of the partially depleted (PD) SOI transistor is used to store “holes” generated by impact ionization in the floating body, which performs the “integrate” function. Recombination or equivalent hole loss mimics the “leak” functions. The “hole” storage reduces the source barrier to increase the transistor current. Upon reaching a threshold current level, an external circuit records a “firing” event and resets the SOI MOSFET by draining all the stored holes. In terms of application, the neuron is able to show classification problems with reasonable accuracy. We looked at the effect of scaling experimentally. Channel length scaling reduces voltage for impact ionization and enables sharper impact ionization producing significant designability of the neuron. A circuit equivalence is also demonstrated to understand the dynamics qualitatively. Three distinct regimes are observed during integration based on different hole leakage mechanism.

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

2009 ◽  
Vol 30 (11) ◽  
pp. 1212-1214 ◽  
Author(s):  
S. Poli ◽  
M.G. Pala
Keyword(s):  
Silicon Nanowire ◽  
Channel Length ◽  
Length Dependence ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

2015 ◽  
Vol 117 (23) ◽  
pp. 234502 ◽  
Author(s):  
Jae Gwang Um ◽  
Mallory Mativenga ◽  
Piero Migliorato ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Length Dependence ◽  
Indium Gallium

Channel-length dependence of substrate current characteristic of LDD MOSFET's

1985 ◽  
Vol 32 (9) ◽  
pp. 1885-1887
Author(s):  
S.N. Shabde ◽  
F. Barman ◽  
A. Bhattacharyya
Keyword(s):  
Channel Length ◽  
Current Characteristic ◽  
Length Dependence ◽  
Substrate Current

Channel length dependence of field-effect mobility ofc-axis-aligned crystalline In–Ga–Zn–O field-effect transistors

2015 ◽  
Vol 54 (4) ◽  
pp. 041103 ◽  
Author(s):  
Shinpei Matsuda ◽  
Erumu Kikuchi ◽  
Yasumasa Yamane ◽  
Yutaka Okazaki ◽  
Shunpei Yamazaki
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Field Effect Mobility ◽  
Length Dependence
Sign in / Sign up

Export Citation Format

Share Document