Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

2009 ◽  
Author(s):  
Mirko Poljak ◽  
Vladimir Jovanovic ◽  
Tomislav Suligoj
Keyword(s):  
Thin Body ◽  
Double Gate ◽  
Limited Mobility

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

2008 ◽  
Vol 17 (8) ◽  
pp. 3077-3082 ◽  
Author(s):  
Luan Su-Zhen ◽  
Liu Hong-Xia
Keyword(s):  
Schottky Barrier ◽  
Compact Model ◽  
Thin Body ◽  
Double Gate

Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

2006 ◽  
Vol 53 (6) ◽  
pp. 3363-3371 ◽  
Author(s):  
D. Munteanu ◽  
V. Ferlet-Cavrois ◽  
J. L. Autran ◽  
P. Paillet ◽  
J. Baggio ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Quantum Effects ◽  
Heavy Ion ◽  
Thin Body ◽  
Double Gate ◽  
Heavy Ion Irradiation

Ion implantation for low-resistive source/drain contacts in FinFET devices

2008 ◽  
Vol 1070 ◽  
Author(s):  
Mark J. H. van Dal ◽  
Ray Duffy ◽  
Bartek J. Pawlak ◽  
Nadine Collaert ◽  
Malgorzata Jurczak ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Silicon Crystal ◽  
Thin Body ◽  
Device Performance ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effect ◽  
A New Technique ◽  
Resistive Source

ABSTRACTFinFET is one of the leading candidates to replace the classical planar MOSFET for future CMOS technologies due to the double-gate configuration of the device leading to an intrinsically superior short channel effect (SCE) control. A major challenge for FinFETs is the increase in parasitic source-drain resistance (Rsd) as the fin width is scaled. As fins must be narrow in order to control SCEs, Rsd reduction is critical. This work will deal with the challenges faced in the use of ion implantation for the low-ohmic source-drain contacts. Firstly a new technique to characterize fin sidewall doping concentration will be introduced. We will have a closer look at the Rsd dependency upon fin width for different fin implant conditions and investigate how the implant conditions affect FinFET device performance. It will be shown that the cause of the device degradation upon fin width scaling is related to the fundamental issues of silicon crystal integrity in thin-body Si after amorphizing implant and recrystallization during source-drain activation.

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