High Current Drive in Ultra-Short Impact Ionization MOS (I-MOS) Devices

2006 ◽  
Author(s):  
C. Charbuillet ◽  
S. Monfray ◽  
E. Dubois ◽  
P. Bouillon ◽  
F. Judong ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Current Drive ◽  
High Current ◽  
Mos Devices

scholarly journals Study of off-axis current drive using EC top-launch in KSTAR

2019 ◽  
Vol 203 ◽  
pp. 02003
Author(s):  
Young-soon Bae
Keyword(s):  
Operation Research ◽  
Essential Element ◽  
Current Drive ◽  
Electron Trapping ◽  
Lower Hybrid ◽  
Low Density ◽  
Simulation Studies ◽  
High Current ◽  
High Efficient ◽  
Lower Hybrid Current Drive

The off-axis current drive using electron cyclotron (EC) wave is typically very low due to the low density and temperature and electron trapping effect when it is launched from outside midplane. However, the heating and current drive by EC wave is being regarded as a essential element as an off-axis current drive source together with lower hybrid current drive (LHCD) for advanced tokamak operation research in KSTAR in future. Therefore, the reliable and high efficient ECCD using top launch has been studied for two different launch schemes of down-shift and up-shift resonance with various EC frequencies which will be available in the future KSTAR ECRH system. The ray tracing (GENRAY) simulation studies show that a broad ECCD profile peaked off axis is obtained with a high current drive efficiency for both schemes. It is almost twice as high as that of the outside midplane launch for the fundamental O-mode EC wave.

Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

2002 ◽  
Vol 46 (3) ◽  
pp. 337-342 ◽  
Author(s):  
B. Marchand ◽  
B. Cretu ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Blachier ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Deep Submicron ◽  
Secondary Impact ◽  
Mos Devices ◽  
Device Aging

scholarly journals High-efficiency high-current drive power converter IC for wearable medical devices

2015 ◽  
Vol 12 (24) ◽  
pp. 20150953-20150953 ◽  
Author(s):  
Yen-Chia Chu ◽  
Nabi Sertac Artan ◽  
Dariusz Czarkowski ◽  
Le-Ren Chang-Chien ◽  
Jonathan Chao
Keyword(s):  
Medical Devices ◽  
High Efficiency ◽  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Drive Power ◽  
Wearable Medical

P‐33: A High Current‐Drive, Step‐Up Capacitive Power Converter for Display Driver

2020 ◽  
Vol 51 (1) ◽  
pp. 1474-1477
Author(s):  
Chenglin Li ◽  
Dewei Zhang ◽  
Weiling Zeng ◽  
Hesheng Lin ◽  
Min Zhang
Keyword(s):  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Display Driver

Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive

2004 ◽  
Vol 25 (6) ◽  
pp. 411-413 ◽  
Author(s):  
A.M. Ionescu ◽  
S. Mahapatra ◽  
V. Pott
Keyword(s):  
Coulomb Blockade ◽  
Current Drive ◽  
High Current

Modeling of Polysilicon Resistors, P-N Junction Diodes and Mosfet's

1984 ◽  
Vol 33 ◽  
Author(s):  
A. N. Khondker ◽  
S. S. Ahmed ◽  
T. Liou ◽  
D. M. Kim
Keyword(s):  
Carrier Lifetime ◽  
Current Flow ◽  
Dopant Concentration ◽  
High Current ◽  
Ohmic Conduction ◽  
Direction Parallel ◽  
Mos Devices ◽  
Wide Range ◽  
Conduction Channel ◽  
Channel Region

ABSTRACTConductivity in bulk polysilicon is discussed, applicable over a wide range of dopant concentration, temperature, grain size and trap density. The I-V behavior in a lateral poly p-n junction is analytically modeled, incorporating the effects of carrier lifetime operative in crystalline grain and amorphous conducting boundary. In particular, the extremely short carrier lifetime within the grain boundary is shown to provide an ohmic conduction channel in a direction parallel to current flow. This ohmic current can account for the unusually high current levels observed at small applied voltages. Also, the shift of the threshold voltage of MOS devices, as influenced by grain traps near the channel region, is analysed.

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