Dislocation Formation During Physical Vapor Transport Growth of 4 H‐SiC Crystals

2021 ◽  
pp. 1-32
Author(s):  
Noboru Ohtani
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Dislocation Formation

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

2009 ◽  
Vol 311 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

The Relationship Between Micropipes and Screw Dislocations in Pvt Grown 6H-Sic

1996 ◽  
Vol 423 ◽  
Author(s):  
Jennifer Giocondi ◽  
Gregory S. Rohrer ◽  
Marek Skowronski ◽  
V. Balakrishna ◽  
G. Augustine ◽  
...  
Keyword(s):  
Scanning Force Microscopy ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Surface ◽  
Repeat Distance ◽  
Screw Dislocations ◽  
Burgers Vector ◽  
Force Microscopy ◽  
Scanning Force ◽  
The Relationship

AbstractThe growth surface of a 6H-SiC boule, grown by physical vapor transport, was examined using scanning force microscopy. The dimensions of surface/micropipe intersections and screw dislocation Burgers vectors have been determined from topographic data. All micropipes are positioned along the lines of super screw dislocations with a Burgers vectors of at least 4 times the c-axis repeat distance (15.2 Å). Perfect c-axis screw dislocations with Burgers vectors of only 15.2 Å are stable and do not have open cores. Measurements show that micropipe core radii, determined indirectly from the width of the craters formed at the surface/micropipe intersections, increase with the square of the dislocation Burgers vector.

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