A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

2003 ◽  
Vol 15 (17) ◽  
pp. 1409-1413 ◽  
Author(s):  
S. Narushima ◽  
H. Mizoguchi ◽  
K. Shimizu ◽  
K. Ueda ◽  
H. Ohta ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Heterojunction Diodes ◽  
P Type

scholarly journals Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015106 ◽  
Author(s):  
Junghwan Kim ◽  
Norihiko Miyokawa ◽  
Keisuke Ide ◽  
Yoshitake Toda ◽  
Hidenori Hiramatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Light Emitting ◽  
Amorphous Oxide Semiconductor

Enhanced Seebeck Coefficient of Amorphous Oxide Semiconductor Superlattices

2007 ◽  
Vol 1044 ◽  
Author(s):  
Hiromichi Ohta ◽  
Rong Huang ◽  
Yuichi Ikuhara
Keyword(s):  
Seebeck Coefficient ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Semiconductor ◽  
High Electrical Conductivity ◽  
Amorphous Oxide ◽  
Substrate Heating ◽  
Amorphous Oxide Semiconductor ◽  
Quantum Size

AbstractWe propose herein that amorphous oxide semiconductor (AOS) superlattices, which can be deposited on various substrate including glasses or plastics without any substrate heating, are appropriate for the realization of superlattice thermoelectric devices. As an example, thermoelectric properties of AOS superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, were measured to clarify whether enhancement of Seebeck coefficient |S| occurs or not. The |S|2D value increases drastically with decreasing a-In-Zn-O thickness (dIZO) when the dIZO is < ∼5 nm, and reached 73 μV·K-1 (dIZO = 0.3 nm), which is ∼4 times larger than that of bulk |S|3D (19 μV·K-1), while it kept high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.

scholarly journals Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Mingzhi Dai ◽  
Weiliang Wang ◽  
Pengjun Wang ◽  
Muhammad Zahir Iqbal ◽  
Nasim Annabi ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Artificial Synapse

Wet-Etch Method for Patterning Metal Electrodes Directly on Amorphous Oxide Semiconductor Films

2012 ◽  
Vol 1 (5) ◽  
pp. P82-P84 ◽  
Author(s):  
M. Zhao ◽  
L. Lan ◽  
H. Xu ◽  
M. Xu ◽  
M. Li ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Semiconductor Films ◽  
Metal Electrodes ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Wet Etch

Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 626-632 ◽  
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

2019 ◽  
Vol 5 (3) ◽  
pp. 1800824 ◽  
Author(s):  
Dun-Bao Ruan ◽  
Po-Tsun Liu ◽  
Yi-Heng Chen ◽  
Yu-Chuan Chiu ◽  
Ta-Chun Chien ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor
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