Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 626-632 ◽  
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

Correction to Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (4) ◽  
pp. 1273-1273
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors

2018 ◽  
Vol 10 (47) ◽  
pp. 40631-40640 ◽  
Author(s):  
Guoqiang Han ◽  
Shuguang Cao ◽  
Qian Yang ◽  
Wenyu Yang ◽  
Tailiang Guo ◽  
...  
Keyword(s):  
High Performance ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Flexible Photodetector ◽  
Photodetector Arrays

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

scholarly journals High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

2015 ◽  
Vol 1 (1-2) ◽  
pp. 1400024 ◽  
Author(s):  
Vincenzo Pecunia ◽  
Kulbinder Banger ◽  
Henning Sirringhaus
Keyword(s):  
High Performance ◽  
Gate Dielectrics ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

scholarly journals High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

2016 ◽  
Vol 4 (34) ◽  
pp. 7917-7923 ◽  
Author(s):  
Yu Wang ◽  
Takio Kizu ◽  
Lei Song ◽  
Yujia Zhang ◽  
Sai Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Ferroelectric Polymer ◽  
Effect Transistor

High-performance Fe-FET memories using InSiO and P(VDF–TrFE) as the semiconductor and dielectric, respectively, were fabricated with a carrier mobility of 84.1 cm V−1 s−1.

Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

2008 ◽  
Author(s):  
Takeomi Morita ◽  
Syuichi Nagamatsu ◽  
Vipul Singh ◽  
Shinya Oku ◽  
Wataru Takashima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Fullerene Derivatives
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