Full Visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes

In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.

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High-quality InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes

IEEE Photonics Conference 2012 ◽

10.1109/ipcon.2012.6358844 ◽

2012 ◽

Author(s):

Xuyong Yang ◽

Swee Tiam Tan ◽

Hilmi Volkan Demir ◽

Xiao Wei Sun

Keyword(s):

Quantum Dot ◽

Light Emitting Diodes ◽

High Quality ◽

Light Emitting ◽

Zns Nanocrystals

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ZnSe:Te/ZnSeS/ZnS nanocrystals: an access to cadmium-free pure-blue quantum-dot light-emitting diodes

Nanoscale ◽

10.1039/d0nr01019g ◽

2020 ◽

Vol 12 (21) ◽

pp. 11556-11561 ◽

Cited By ~ 2

Author(s):

Zhen Bao ◽

Zhen-Feng Jiang ◽

Qiang Su ◽

Hsin-Di Chiu ◽

Heesun Yang ◽

...

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Light Emitting Diodes ◽

Blue Emission ◽

Specific Structure ◽

Emission Wavelength ◽

Light Emitting ◽

Zns Nanocrystals

The emission wavelength of ZnSe/ZnS quantum dots was successfully tuned from the violet (∼420 nm) to pure-blue (∼455 nm) region by doping Te into the ZnSe core. A specific structure QLED fabricated with ZnSe:0.03Te/ZnSeS/ZnS QDs realized pure-blue emission.

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Quantum-dot light-emitting diodes utilizing CdSe∕ZnS nanocrystals embedded in TiO2 thin film

Applied Physics Letters ◽

10.1063/1.3028070 ◽

2008 ◽

Vol 93 (19) ◽

pp. 191116 ◽

Cited By ~ 26

Author(s):

Seung-Hee Kang ◽

Ch. Kiran Kumar ◽

Zonghoon Lee ◽

Kyung-Hyun Kim ◽

Chul Huh ◽

...

Keyword(s):

Thin Film ◽

Quantum Dot ◽

Tio2 Thin Film ◽

Light Emitting Diodes ◽

Light Emitting ◽

Zns Nanocrystals

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Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Nanomaterials ◽

10.3390/nano12010154 ◽

2022 ◽

Vol 12 (1) ◽

pp. 154

Author(s):

Ming-Ru Wen ◽

Sheng-Hsiung Yang ◽

Wei-Sheng Chen

Keyword(s):

Quantum Dot ◽

Current Efficiency ◽

Light Emitting Diodes ◽

Hole Mobility ◽

Environmental Stability ◽

Hole Injection ◽

Visible Range ◽

Carrier Injection ◽

High Brightness ◽

Light Emitting

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

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