scholarly journals Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 154
Author(s):  
Ming-Ru Wen ◽  
Sheng-Hsiung Yang ◽  
Wei-Sheng Chen
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Light Emitting Diodes ◽  
Hole Mobility ◽  
Environmental Stability ◽  
Hole Injection ◽  
Visible Range ◽  
Carrier Injection ◽  
High Brightness ◽  
Light Emitting

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

scholarly journals Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

RSC Advances ◽  
2019 ◽  
Vol 9 (21) ◽  
pp. 11996-12000
Author(s):  
Su Been Heo ◽  
Jong Hun Yu ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
Ji-Eun Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transparent Electrode ◽  
Hole Injection ◽  
Carrier Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Interfacial Electronic Structure ◽  
Gap States

Interfacial electronic structure between W-doped In2O3 and V2O5 has been investigated, and we found gap states that can provide an efficient hole carrier injection pathway.

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

Partially pyridine-functionalized quantum dots for efficient red, green, and blue light-emitting diodes

2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting ◽  
Turn On ◽  
Colloidal Quantum Dot

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.

Optimization of Hole Injection and Transport Layers for High-Performance Quantum-Dot Light-Emitting Diodes

2019 ◽  
Vol 75 (12) ◽  
pp. 1033-1037
Author(s):  
Jae Seung Shin ◽  
Jong Hun Yu ◽  
Su Been Heo ◽  
Seong Jun Kang
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting

P‐type Sb‐doped Cu 2 O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS‐Free Quantum Dot Light Emitting Diodes

2019 ◽  
Vol 216 (11) ◽  
pp. 1900004 ◽  
Author(s):  
Hyeong‐Jin Seo ◽  
Ji‐Eun Lee ◽  
Su Been Heo ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Ito Electrode ◽  
P Type

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

2017 ◽  
Vol 9 (9) ◽  
pp. 8187-8193 ◽  
Author(s):  
Changyin Ji ◽  
Min Lu ◽  
Hua Wu ◽  
Xiaoyu Zhang ◽  
Xinyu Shen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting

scholarly journals Light extraction from quantum dot light emitting diodes by multiscale nanostructures

2020 ◽  
Vol 2 (5) ◽  
pp. 1967-1972 ◽  
Author(s):  
Shujie Wang ◽  
Chenran Li ◽  
Yang Xiang ◽  
Hui Qi ◽  
Yan Fang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting ◽  
Standard Device

Green emitting QLEDs based on multiscale grid/wrinkle outcoupling nanostructures yield a maximum EQE of 21.3% and current efficiency of 88.3 cd A−1, which are 1.7 times those of the standard device.

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