scholarly journals Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 663
Author(s):  
Chun-Yu Lee ◽  
Yi-Min Chen ◽  
Yao-Zong Deng ◽  
Ya-Pei Kuo ◽  
Peng-Yu Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thin Metal ◽  
Visible Range ◽  
Driving Voltage ◽  
High Current Efficiency ◽  
Light Emitting ◽  
Indium Zinc Oxide ◽  
Average Transmittance

In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400–700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.

Transparent InP Quantum Dot Light-Emitting Diodes with ZrO2Electron Transport Layer and Indium Zinc Oxide Top Electrode

2016 ◽  
Vol 26 (20) ◽  
pp. 3454-3461 ◽  
Author(s):  
Hee Yeon Kim ◽  
Yu Jin Park ◽  
Jiwan Kim ◽  
Chul Jong Han ◽  
Jeongno Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Light Emitting ◽  
Indium Zinc Oxide

P‐114: White and Top‐Emitting Quantum‐Dot Light‐Emitting Diodes with Indium‐Tin‐Oxide Top Electrodes

2019 ◽  
Vol 50 (1) ◽  
pp. 1677-1680
Author(s):  
Shuang Jin ◽  
Heng Zhang ◽  
Yizhe Sun ◽  
Qiang Su ◽  
Fengtian Xia ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Light Emitting

Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes

2018 ◽  
Vol 6 (36) ◽  
pp. 9642-9648 ◽  
Author(s):  
Piaoyang Shen ◽  
Xiaomin Li ◽  
Fan Cao ◽  
Xingwei Ding ◽  
Xuyong Yang
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Solution Process ◽  
Great Promise ◽  
High Current ◽  
High Current Efficiency ◽  
Light Emitting ◽  
Information Displays

Flexible information displays hold great promise for future optoelectronic applications. Herein, we report the fabrication of an efficient flexible white quantum dot (QD) light-emitting diode (QLED) with mixed red, green and blue QDs as emitters via an all-solution process. The resulting flexible QLED with a pure white emission shows high current efficiency of 10.5 cd A−1.

Highly transparent quantum-dot light-emitting diodes with sputtered indium-tin-oxide electrodes

2016 ◽  
Vol 4 (9) ◽  
pp. 1838-1841 ◽  
Author(s):  
Weigao Wang ◽  
Huiren Peng ◽  
Shuming Chen
Keyword(s):  
Quantum Dot ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Oxide Electrodes ◽  
Zno Buffer Layer

Highly transparent QD-LEDs have been demonstrated by using a ZnO buffer layer and sputtered ITO electrodes.

scholarly journals Full Visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes

2012 ◽  
Vol 24 (30) ◽  
pp. 4180-4185 ◽  
Author(s):  
Xuyong Yang ◽  
Dewei Zhao ◽  
Kheng Swee Leck ◽  
Swee Tiam Tan ◽  
Yu Xin Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Visible Range ◽  
Light Emitting ◽  
Zns Nanocrystals

Electroluminescent Quantum Dot Light-Emitting Diodes with ZnO and MoO3 Carrier Transport Layers

2013 ◽  
Vol 677 ◽  
pp. 98-102 ◽  
Author(s):  
Chun Yuan Huang ◽  
Ping Hua Tsai ◽  
Ying Chih Chen ◽  
Hsin Chieh Yu ◽  
Yan Kuin Su
Keyword(s):  
Quantum Dot ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Sol Gel ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Electron Transport Layer ◽  
Device Structure ◽  
Light Emitting

In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO3hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO3were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs2CO3/QD/CBP/MoO3/Au. It was found that the Cs2CO3played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs2CO3buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED’s commerizing.

scholarly journals Improved Efficiency Roll-Off and Operational Lifetime of Organic Light-Emitting Diodes with a Tetradentate Platinum(II) Complex by Using an n-Doped Electron-Transporting Layer

Molecules ◽  
2021 ◽  
Vol 26 (7) ◽  
pp. 1835
Author(s):  
Weiqiang Liu ◽  
Liang Zhou ◽  
Long Yi Jin ◽  
Gang Cheng
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Driving Voltage ◽  
High Luminance ◽  
High Current Efficiency ◽  
Light Emitting ◽  
Organic Light ◽  
Operational Lifetime ◽  
Electron Transporting Layer ◽  
Charged Carrier

The efficiency roll-off and operational lifetime of organic light-emitting diodes (OLEDs) with a tetradentate Pt(II) emitter is improved by engaging an n-doped electron-transporting layer (ETL). Compared to those devices with non-doped ETL, the driving voltage is lowered, the charged carrier is balanced, and the exciton density in the emissive layer (EML) is decreased in the device with n-doped ETL with 8-hydroxyquinolinolatolithium (Liq). High luminance of almost 70,000 cd m−2 and high current efficiency of 40.5 cd A−1 at high luminance of 10,000 cd m−2 is achieved in the device with 50 wt%-Liq-doped ETL. More importantly, the extended operational lifetime of 1945 h is recorded at the initial luminance of 1000 cd m−2 in the 50 wt%-Liq-doped device, which is longer than that of the device with non-doped ETL by almost 10 times. This result manifests the potential application of tetradentate Pt(II) complexes in the OLED industry.

scholarly journals Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Nanomaterials ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 154
Author(s):  
Ming-Ru Wen ◽  
Sheng-Hsiung Yang ◽  
Wei-Sheng Chen
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Light Emitting Diodes ◽  
Hole Mobility ◽  
Environmental Stability ◽  
Hole Injection ◽  
Visible Range ◽  
Carrier Injection ◽  
High Brightness ◽  
Light Emitting

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

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