Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage

2012 ◽  
Vol 24 (46) ◽  
pp. 6210-6215 ◽  
Author(s):  
Shifeng Miao ◽  
Hua Li ◽  
Qingfeng Xu ◽  
Youyong Li ◽  
Shunjun Ji ◽  
...  
ACS Nano ◽  
2021 ◽  
Vol 15 (2) ◽  
pp. 2686-2697
Author(s):  
Fabio Bussolotti ◽  
Jing Yang ◽  
Hiroyo Kawai ◽  
Calvin Pei Yu Wong ◽  
Kuan Eng Johnson Goh

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.


2012 ◽  
Vol 100 (1) ◽  
pp. 013303 ◽  
Author(s):  
Peter Darmawan ◽  
Takeo Minari ◽  
Akichika Kumatani ◽  
Yun Li ◽  
Chuan Liu ◽  
...  

2013 ◽  
Vol 125 (12) ◽  
pp. 3501-3504 ◽  
Author(s):  
Chao Min ◽  
Changsheng Shi ◽  
Wenjun Zhang ◽  
Tonggang Jiu ◽  
Jiangshan Chen ◽  
...  

2004 ◽  
Vol 396 (1-3) ◽  
pp. 92-96 ◽  
Author(s):  
J.X. Tang ◽  
C.S. Lee ◽  
S.T. Lee ◽  
Y.B. Xu

Sign in / Sign up

Export Citation Format

Share Document