scholarly journals Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Memory Device ◽  
Buffer Layers ◽  
Memory Devices

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.

High performance polymers and their PCBM hybrids for memory device application

2015 ◽  
Vol 6 (42) ◽  
pp. 7464-7469 ◽  
Author(s):  
Hung-Ju Yen ◽  
Chih-Jung Chen ◽  
Jia-Hao Wu ◽  
Guey-Sheng Liou
Keyword(s):  
Electron Acceptor ◽  
High Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Device Application ◽  
High Performance Polymers ◽  
Wide Range

Three series of memory devices were prepared from OHTPA-based high-performance polymers and the memory behaviors can be tuned in a wide range by varying the concentration of electron-acceptor PCBM.

Nonvolatile resistive memories utilizing functional PES-based supramolecular film

2017 ◽  
Vol 30 (9) ◽  
pp. 1056-1063 ◽  
Author(s):  
Hejing Sun ◽  
Haibo Zhang ◽  
Zheng Chen ◽  
Jinhui Pang ◽  
Cong Gao ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
High Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Threshold Voltages ◽  
High Performance Polymer ◽  
Fabrication And Characterization ◽  
First Time

This study reports the fabrication and characterization of polymer resistive switching memory devices fabricated from poly(ether sulfone)s (PESs), containing carboxylic functional groups for hydrogen bonding with disperse red 1. PES-based supramolecular memory devices exhibited write-once read-many-times-type memory effects, with low switching threshold voltages below −5.0 V and high ON/OFF current ratios of 105. It is the first time that the concept of azobenzene supramolecular PES based on hydrogen bonding for electrical memory device application was investigated. A possible switching mechanism based on the charge transfer interaction was proposed through molecular simulation, optical absorption, and cyclic voltammetry. These results render the PES-based supramolecular memory devices as promising components for high-performance polymer memory devices.

A self-assembling amphiphilic perylene bisimide and its application for WORM memory devices

2016 ◽  
Vol 40 (10) ◽  
pp. 8886-8891 ◽  
Author(s):  
Junfeng Li ◽  
Chenglong Yang ◽  
Ying Chen ◽  
Wen-Yong Lai
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Perylene Bisimide ◽  
Self Assembling ◽  
External Stimuli

Morphologies of the amphiphilic perylene bisimide assemblies were controlled and switched by external stimuli to afford a good-performance WORM memory device.

scholarly journals Overview of organic memory devices

2009 ◽  
Vol 367 (1905) ◽  
pp. 4141-4157 ◽  
Author(s):  
D. Prime ◽  
S. Paul
Keyword(s):  
High Performance ◽  
Storage Capacity ◽  
Memory Devices ◽  
Future Directions ◽  
Organic Memory ◽  
Industrial Implementation ◽  
Organic Memory Devices ◽  
Different Types ◽  
Charging Mechanism ◽  
Memory Structures

The demand for more efficient and faster memory structures is greater today than ever before. The efficiency of memory structures is measured in terms of storage capacity and the speed of functioning. However, the production cost of such configurations is the natural constraint on how much can be achieved. Organic memory devices (OMDs) provide an ideal solution, in being inexpensive, and at the same time promising high performance. However, all OMDs reported so far suffer from multiple drawbacks that render their industrial implementation premature. This article introduces the different types of OMDs, discusses the progress in this field over the last 9 years and invokes conundrums that scholars of this field are currently faced with, such as questions about the charging mechanism and stability of devices, contradictions in the published work and some future directions.

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  
Keyword(s):  
Memory Device ◽  
Star Polymer ◽  
Charge Storage ◽  
Device Performance ◽  
Memory Devices ◽  
Storage Material ◽  
Novel Strategy ◽  
A Charge

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

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