scholarly journals Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013)

2013 ◽  
Vol 25 (7) ◽  
pp. 938-938 ◽  
Author(s):  
Jianyi Chen ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Liping Huang ◽  
Yunzhou Xue ◽  
...  
2012 ◽  
Vol 25 (7) ◽  
pp. 992-997 ◽  
Author(s):  
Jianyi Chen ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Liping Huang ◽  
Yunzhou Xue ◽  
...  

2010 ◽  
Author(s):  
T. Uchino ◽  
G. N. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  

2009 ◽  
Vol 131 (6) ◽  
pp. 2094-2095 ◽  
Author(s):  
Shaoming Huang ◽  
Qiran Cai ◽  
Jiangying Chen ◽  
Yong Qian ◽  
Lijie Zhang

2009 ◽  
Vol 131 (6) ◽  
pp. 2082-2083 ◽  
Author(s):  
Bilu Liu ◽  
Wencai Ren ◽  
Libo Gao ◽  
Shisheng Li ◽  
Songfeng Pei ◽  
...  

2011 ◽  
Vol 10 (01n02) ◽  
pp. 13-17 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI

We have grown metal catalyst free, straight Si nanowires (NWs) with high aspect ratio of about 130 on Si (100) substrate using radio frequency magnetron sputtering. Thin Si seed layer on thermally oxidized substrate was used for catalyst-free growth. Then Si deposition was done on that substrate using sputtering technique followed by heat treatment at different temperatures (900°C–1100°C). Sample heated at 1000°C results in straight, long, and uniform cylindrical shaped Si NWs with diameter 62–74 nm and length up to 8 μm, whereas sample heated above 1000°C transformed toward nanorods with larger diameter. However, no significant growth of Si NWs took place at 900°C. Sputter deposition technique provides an alternate fabrication route for Si NW synthesis. For comparison, we have also grown Au catalyst assisted Si NWs on Si (100) substrate by similar process. These nanowires also show similar morphology with diameter 48–65 nm and aspect ratio about 165. Growth mechanism and effect of growth temperatures on the structure and morphology of Si NWs are discussed.


2011 ◽  
Vol 50 (4S) ◽  
pp. 04DN02
Author(s):  
Takashi Uchino ◽  
John L. Hutchison ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
Kees de Groot ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (20) ◽  
pp. 11990-11993 ◽  
Author(s):  
Yuyu Feng ◽  
Xi Zhang ◽  
Li Lei ◽  
Ya Nie ◽  
Gang Xiang

Here we report that a rapid and catalyst-free growth of high quality SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials, the SnSe films exhibit high TE performance.


2011 ◽  
Vol 26 (8) ◽  
pp. 881-884 ◽  
Author(s):  
Can WANG ◽  
Liang ZHAN ◽  
Zhen-Hong HUANG ◽  
Wen-Ming QIAO ◽  
Xiao-Yi LIANG ◽  
...  

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