Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

2019 ◽  
Vol 11 (15) ◽  
pp. 14427-14436 ◽  
Author(s):  
Yibo Dong ◽  
Chuantong Cheng ◽  
Chen Xu ◽  
Xurui Mao ◽  
Yiyang Xie ◽  
...  
Keyword(s):  
Optoelectronic Device ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Device Applications ◽  
Free Growth

Metal-Catalyst-Free Growth of Carbon Nanotubes for CMOS Integration

2010 ◽  
Author(s):  
T. Uchino ◽  
G. N. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Free Growth

scholarly journals Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013)

2013 ◽  
Vol 25 (7) ◽  
pp. 938-938 ◽  
Author(s):  
Jianyi Chen ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Liping Huang ◽  
Yunzhou Xue ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Metal Catalyst ◽  
High Quality ◽  
Two Stage ◽  
Catalyst Free ◽  
Graphene Films ◽  
Free Growth

Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes on Substrates

2009 ◽  
Vol 131 (6) ◽  
pp. 2094-2095 ◽  
Author(s):  
Shaoming Huang ◽  
Qiran Cai ◽  
Jiangying Chen ◽  
Yong Qian ◽  
Lijie Zhang
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Metal Catalyst ◽  
Single Walled Carbon ◽  
Catalyst Free ◽  
Free Growth ◽  
Walled Carbon Nanotubes

Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes

2009 ◽  
Vol 131 (6) ◽  
pp. 2082-2083 ◽  
Author(s):  
Bilu Liu ◽  
Wencai Ren ◽  
Libo Gao ◽  
Shisheng Li ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Metal Catalyst ◽  
Single Walled Carbon ◽  
Catalyst Free ◽  
Free Growth ◽  
Walled Carbon Nanotubes

EFFECT OF GROWTH TEMPERATURE ON THE CATALYST-FREE GROWTH OF LONG SILICON NANOWIRES USING RADIO FREQUENCY MAGNETRON SPUTTERING

2011 ◽  
Vol 10 (01n02) ◽  
pp. 13-17 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI
Keyword(s):  
Aspect Ratio ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Silicon Nanowires ◽  
Radio Frequency Magnetron ◽  
Similar Process ◽  
Metal Catalyst ◽  
Radio Frequency Magnetron Sputtering ◽  
Catalyst Free ◽  
Free Growth

We have grown metal catalyst free, straight Si nanowires (NWs) with high aspect ratio of about 130 on Si (100) substrate using radio frequency magnetron sputtering. Thin Si seed layer on thermally oxidized substrate was used for catalyst-free growth. Then Si deposition was done on that substrate using sputtering technique followed by heat treatment at different temperatures (900°C–1100°C). Sample heated at 1000°C results in straight, long, and uniform cylindrical shaped Si NWs with diameter 62–74 nm and length up to 8 μm, whereas sample heated above 1000°C transformed toward nanorods with larger diameter. However, no significant growth of Si NWs took place at 900°C. Sputter deposition technique provides an alternate fabrication route for Si NW synthesis. For comparison, we have also grown Au catalyst assisted Si NWs on Si (100) substrate by similar process. These nanowires also show similar morphology with diameter 48–65 nm and aspect ratio about 165. Growth mechanism and effect of growth temperatures on the structure and morphology of Si NWs are discussed.

scholarly journals Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DN02
Author(s):  
Takashi Uchino ◽  
John L. Hutchison ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
Kees de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Silica Nanowires ◽  
Free Growth

Metal-catalyst-free Growth and Characterization of Nitrogen-doped Carbon Nanotubes

2011 ◽  
Vol 26 (8) ◽  
pp. 881-884 ◽  
Author(s):  
Can WANG ◽  
Liang ZHAN ◽  
Zhen-Hong HUANG ◽  
Wen-Ming QIAO ◽  
Xiao-Yi LIANG ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Metal Catalyst ◽  
Nitrogen Doped ◽  
Catalyst Free ◽  
Free Growth ◽  
Nitrogen Doped Carbon

scholarly journals Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (53) ◽  
pp. 33185-33193 ◽  
Author(s):  
Shan Zheng ◽  
Guofang Zhong ◽  
Xingyi Wu ◽  
Lorenzo D'Arsiè ◽  
John Robertson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Gas Mixture ◽  
Catalyst Free ◽  
Free Growth ◽  
Insulating Substrates

We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C2H2, NH3, and H2 at a temperature of 700–750 °C.

Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates

2012 ◽  
Vol 25 (7) ◽  
pp. 992-997 ◽  
Author(s):  
Jianyi Chen ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Liping Huang ◽  
Yunzhou Xue ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Metal Catalyst ◽  
High Quality ◽  
Two Stage ◽  
Catalyst Free ◽  
Graphene Films ◽  
Free Growth

scholarly journals Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

2011 ◽  
Vol 50 (4) ◽  
pp. 04DN02 ◽  
Author(s):  
Takashi Uchino ◽  
John L. Hutchison ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
Kees de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Silica Nanowires ◽  
Free Growth
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