Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

2018 ◽  
Vol 30 (40) ◽  
pp. 1804120 ◽  
Author(s):  
Minuk Lee ◽  
Jeong-Wan Jo ◽  
Yoon-Jeong Kim ◽  
Seungbeom Choi ◽  
Sung Min Kwon ◽  
...  
2021 ◽  
Author(s):  
Juhyeok Lee ◽  
Mingyu Jae ◽  
Syed Zahid Hassan ◽  
Dae Sung Chung

Various amidine base with different pKa values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm2 V−1 s−1 on average (46.6 cm2 V−1 s−1 maximum) but also a high level of bias-stress stability.


2015 ◽  
Vol 2 (7) ◽  
pp. 1500058 ◽  
Author(s):  
Yen-Hung Lin ◽  
Hendrik Faber ◽  
John G. Labram ◽  
Emmanuel Stratakis ◽  
Labrini Sygellou ◽  
...  

2019 ◽  
Vol 40 (2) ◽  
pp. 228-231 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peixiong Gao ◽  
Penghui He ◽  
Xingqiang Dai ◽  
...  

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