Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

2021 ◽  
pp. 2101059
Author(s):  
Weidong Song ◽  
Jiaxin Chen ◽  
Ziliang Li ◽  
Xiaosheng Fang
2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...


RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.


2021 ◽  
pp. 2102088
Author(s):  
Libo Zhang ◽  
Zhuo Dong ◽  
Lin Wang ◽  
Yibin Hu ◽  
Cheng Guo ◽  
...  

ACS Nano ◽  
2020 ◽  
Vol 14 (7) ◽  
pp. 9098-9106 ◽  
Author(s):  
Mingjin Dai ◽  
Hongyu Chen ◽  
Fakun Wang ◽  
Mingsheng Long ◽  
Huiming Shang ◽  
...  

2021 ◽  
Author(s):  
Jinrong Yao ◽  
Fangfang Chen ◽  
Juanjuan Li ◽  
Junli Du ◽  
Di Wu ◽  
...  
Keyword(s):  

2021 ◽  
Author(s):  
Qixiao Zhao ◽  
Feng Gao ◽  
Hongyu Chen ◽  
Wei Gao ◽  
Mengjia Xia ◽  
...  

A p-Te/n-MoSe2 vdWH polarization-sensitive photodetector with high comprehensive performance is proposed, which would provide an opportunity for constructing a compact monolithic polarization-sensitive imaging system with low energy consumption.


Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 315 ◽  
Author(s):  
Hao Luo ◽  
Bolun Wang ◽  
Enze Wang ◽  
Xuewen Wang ◽  
Yufei Sun ◽  
...  

Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.


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