scholarly journals High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 315 ◽  
Author(s):  
Hao Luo ◽  
Bolun Wang ◽  
Enze Wang ◽  
Xuewen Wang ◽  
Yufei Sun ◽  
...  
Keyword(s):  
High Efficiency ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Zero Bias ◽  
High Responsivity ◽  
Metal Dichalcogenides ◽  
Self Powered ◽  
Ultrafast Charge Transfer

Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.

Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Theoretical Characterization ◽  
New Generation

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.

scholarly journals A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa
Keyword(s):  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Strong Interaction ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Flexible Devices ◽  
Metal Dichalcogenides ◽  
Self Powered

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.

Electronic properties and enhanced photocatalytic performance of van der Waals heterostructures of ZnO and Janus transition metal dichalcogenides

2020 ◽  
Vol 22 (18) ◽  
pp. 10351-10359 ◽  
Author(s):  
M. Idrees ◽  
H. U. Din ◽  
Shafiq Ur Rehman ◽  
M. Shafiq ◽  
Yasir Saeed ◽  
...  
Keyword(s):  
Photocatalytic Performance ◽  
2D Materials ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Promising Candidate ◽  
Van Der Waals Heterostructures ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
The Individual

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures has recently been considered as a promising candidate for photocatalytic and optoelectronic devices because it can combine the advantages of the individual 2D materials.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

scholarly journals Long-lived charge separation following pump-wavelength–dependent ultrafast charge transfer in graphene/WS2 heterostructures

2021 ◽  
Vol 7 (9) ◽  
pp. eabd9061
Author(s):  
Shuai Fu ◽  
Indy du Fossé ◽  
Xiaoyu Jia ◽  
Jingyin Xu ◽  
Xiaoqing Yu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Separation ◽  
Transient Absorption ◽  
Transition Metal Dichalcogenides ◽  
Thermionic Emission ◽  
Great Promise ◽  
Metal Dichalcogenides ◽  
Ultrafast Charge Transfer ◽  
Device Operation ◽  
Interfacial Charge

Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides have shown great promise for optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely, interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS2 heterostructures by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS2 following photoexcitation. We observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. Furthermore, for the CT process across graphene-WS2 interfaces, we find that it occurs via photo-thermionic emission for sub-A-exciton excitations and direct hole transfer from WS2 to the valence band of graphene for above-A-exciton excitations. These findings provide insights to further optimize the performance of optoelectronic devices, in particular photodetection.

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1543-1560 ◽  
Author(s):  
He Tian ◽  
Matthew L. Chin ◽  
Sina Najmaei ◽  
Qiushi Guo ◽  
Fengnian Xia ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

2018 ◽  
Vol 6 (11) ◽  
pp. 2830-2839 ◽  
Author(s):  
Gul Rehman ◽  
S. A. Khan ◽  
B. Amin ◽  
Iftikhar Ahmad ◽  
Li-Yong Gan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Material Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides

Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated.

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