In this work, carbon nitride ( C 3 N 4) nanoparticles (NPs) were synthesized by pulse laser ablation of graphite in ammonium solution, and deposited on silicon substrates by spray. Fourier transform infrared spectroscopy (FTIR), UV-visible spectrophotometer and transmission electron microscopy (TEM) were used to study bonding, absorption, size and morphology of the produce NPs. The FTIR absorption peaks at 2121.6, 1631.7 and 1384 cm-1 stretching vibration bond, it is inferred for the C ≡ N , C = N and C – N , respectively. Bonds suggests the formation, C 3 N 4 NPs. UV absorption peaks coincide with the electronic transitions corresponding to the formation, C 3 N 4 NPs with 3.98 eV optical bandgap. The TEM show the aggregation of the C 3 N 4 NPs with size ranges from 4 to 83 nm, and also the leaf-like structure are shown in the structure of C 3 N 4 suspension. High performance rectifying C 3 N 4/ Si heterojunction with a rectifying ratio exceeding 345 at V = 5 V was obtained, with high photoresponsivity of 2.33 A/W at 600 nm.The results show that C 3 N 4 NPs on silicon substrates will act as very good candidates for making high efficiency photodiodes.
Field Effect Transistors: High‐Performance Phosphorene‐Based Transistors Using a Novel Exfoliation‐Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)
