Gas Sensors: Enhanced Gas Sensing Performance of Organic Field‐Effect Transistors by Modulating the Dimensions of Triethylsilylethynyl‐Anthradithiophene Microcrystal Arrays (Adv. Mater. Interfaces 4/2020)

AbstractThe first paper showing the great potentiality of Carbon Nanotubes Field Effect transistors (CNTFETs) for gas sensing applications was published in 2000 [1]. It has been demonstrated that the performances of this kind of sensors are extremely interesting: a sensitivity of around 100ppt (e.g. for NO2 [2]) has been achieved in 2003 and several techniques to improve selectivity have been tested with very promising results [2]. The main issues that have not allowed, up to now, these devices to strike more largely the market of sensors, have been the lack of an industrial method to obtain low-cost devices, a demonstration of their selectivity in relevant environments and finally a deeper study on the effect of humidity and the possible solutions to reduce it. This contribution deals with CNTFETs based sensors fabricated using air-brush technique deposition on large surfaces. Compared to our last contribution [3], we have optimized the air-brush technique in order to obtain high performances transistors (Log(Ion)/Log(Ioff) ∼ 5/6) with highly reproducible characteristics : this is a key point for the industrial exploitation. We have developed a machine which allows us the dynamic deposition on heated substrates of the SWCNT solutions, improving dramatically the uniformity of the SWCNT mats. We have performed tests using different solvents that could be adapted as a function of the substrates (e.g. flexible substrates). Moreover these transistors have been achieved using different metal electrodes (patented approach [4]) in order to improve selectivity. Results of tests using NO2, NH3 with concentrations between ∼ 1ppm and 10ppm will be shown during the meeting.

Download Full-text

Nanoporous Organic Field‐Effect Transistors Employing a Calixarene Dielectric for Sub‐ppb Gas Sensing

Advanced Electronic Materials ◽

10.1002/aelm.201800362 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1800362 ◽

Cited By ~ 7

Author(s):

Jean‐Nicolas Tisserant ◽

Sebastian Beck ◽

Marc‐Michael Barf ◽

Wolfgang Kowalsky ◽

Robert Lovrincic

Keyword(s):

Field Effect ◽

Gas Sensing ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

Download Full-text

H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings ◽

10.3390/proceedings2130935 ◽

2018 ◽

Vol 2 (13) ◽

pp. 935

Author(s):

Alexey Sizov ◽

Askold Trul ◽

Victoria Chekusova ◽

Oleg Borshchev ◽

Alexey Vasiliev ◽

...

Keyword(s):

Field Effect ◽

Gas Sensing ◽

Field Effect Transistors ◽

Hole Mobility ◽

Electrical Performance ◽

Organic Field Effect Transistors ◽

Ambient Conditions ◽

Long Term Stability ◽

Sensing Technology ◽

Low Concentrations

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

Download Full-text

Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Small ◽

10.1002/smll.201805196 ◽

2019 ◽

Vol 15 (12) ◽

pp. 1805196 ◽

Cited By ~ 24

Author(s):

Shiqi Zhang ◽

Yiwei Zhao ◽

Xiaowen Du ◽

Yingli Chu ◽

Shen Zhang ◽

...

Keyword(s):

Gas Sensors ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

Download Full-text

Amine Detection Using Organic Field Effect Transistor Gas Sensors

Sensors ◽

10.3390/s21010013 ◽

2020 ◽

Vol 21 (1) ◽

pp. 13

Author(s):

Panagiotis Mougkogiannis ◽

Michael Turner ◽

Krishna Persaud

Keyword(s):

Low Power ◽

Gas Sensors ◽

Field Effect ◽

Field Effect Transistors ◽

Limit Of Detection ◽

High Sensitivity ◽

Organic Field Effect Transistors ◽

Practical Applications ◽

Empirical Prediction ◽

Sensitivity And Selectivity

Low power gas sensors with high sensitivity and selectivity are desired for many practical applications. Devices based on organic field effect transistors are promising because they can be fabricated at modest cost and are low power devices. Organic field effect transistors fabricated in bottom-gate bottom-contact configuration using the organic semiconductor [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno] [3,2-b]thiophene) (DPP-T-TT) were systematically investigated to determine the response characteristics to a series of alkylamines and ammonia. The highest sensitivity was to dibutylamine with a limit of detection of 0.025 ppb, followed by n-butylamine, 0.056 ppb, and ammonia, 2.17 ppb. A model was constructed based on the Antoine equation that successfully allows the empirical prediction of the sensitivity and selectivity of the gas sensor to various analytes including amines and alcohols based on the Antoine C parameter and the heat of the vaporization of the analyte.

Download Full-text

New Dynamic Air-Brush Technique for SWCNTs Deposition: Application to Fabrication of CNTFETs for Electronics and Gas Sensing

MRS Proceedings ◽

10.1557/opl.2011.800 ◽

2011 ◽

Vol 1283 ◽

Cited By ~ 1

Author(s):

P. Bondavalli ◽

L. Gorintin ◽

P. Legagneux ◽

J.P. Simonato ◽

L. Cailler

Keyword(s):

Carbon Nanotubes ◽

Response Time ◽

Gas Sensors ◽

Field Effect ◽

Gas Sensing ◽

Field Effect Transistors ◽

Specific Interaction ◽

Flexible Substrates ◽

Percolation Effect

ABSTRACTThis contribution deals with Carbon Nanotubes Field Effect transistors (CNTFETs) based gas sensors fabricated using a completely new dynamic spray based technique (patented) for SWCNTs deposition. The extreme novelty is that our technique is compatible with large surfaces, flexible substrates and allows to fabricate high performances transistors exploiting the percolation effect of the SWCNTs networks achieved with extremely reproducible characteristics. Recently, we have been able to achieve extremely selective measurement of NO2, NH3 and CO using four CNTFETS fabricated using different metals as electrodes, exploiting the specific interaction between gas and metal/SWCNT junctions. In this way we have identify an electronic fingerprinting of the gas detected. The response time is evaluated at less than 30sec.

Download Full-text