A Rapid Detection of COVID‐19 Viral RNA in Human Saliva Using Electrical Double Layer‐Gated Field‐Effect Transistor‐Based Biosensors

We report that photoresponse of a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW) can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on Cu:TCNQ as a channel.It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.

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Graphene-based field-effect transistor biosensors for the rapid detection and analysis of viruses: A perspective in view of COVID-19

Carbon Trends ◽

10.1016/j.cartre.2020.100011 ◽

2020 ◽

Vol 2 ◽

pp. 100011

Author(s):

Joydip Sengupta ◽

Chaudhery Mustansar Hussain

Keyword(s):

Rapid Detection ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Direct probing of selective electron and hole accumulation processes along the channel of an ambipolar double-layer field-effect transistor by optical modulation spectroscopy

Applied Physics Letters ◽

10.1063/1.3692581 ◽

2012 ◽

Vol 100 (10) ◽

pp. 103301 ◽

Cited By ~ 7

Author(s):

Le Zhang ◽

Dai Taguchi ◽

Takaaki Manaka ◽

Mitsumasa Iwamoto

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Optical Modulation ◽

Modulation Spectroscopy ◽

Effect Transistor

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A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

Solid State Communications ◽

10.1016/j.ssc.2007.10.017 ◽

2008 ◽

Vol 145 (3) ◽

pp. 114-117 ◽

Cited By ~ 10

Author(s):

Shohei Kinoshita ◽

Tomo Sakanoue ◽

Masayuki Yahiro ◽

Kazuo Takimiya ◽

Hideaki Ebata ◽

...

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Effect Transistor

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Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

East European Journal of Physics ◽

10.26565/2312-4334-2019-3-09 ◽

2019 ◽

Cited By ~ 1

Keyword(s):

Thin Film ◽

Double Layer ◽

Electric Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Semiconductor Layer ◽

X Ray ◽

Channel Layer ◽

Effect Transistor

The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physical properties of materials since the reported EDLFET and the modulation of electronic states have so far been realised on oxides, nitrides, carbon nanotubes and organic semiconductor but has been rarely reported for the chalcogenides. Honey was used as a gel like electrolytic gate dielectric to generate an enhanced electric field response over SnS semiconductor channel layer and due to its ability to produces high on-current and low voltage operation while forming an ionic gel-like solution similar to ionic gels which consist of ionic liguids. SnS gated honey Electric double layer field effect transistor was assembled using tin sulphide (SnS) thin film as semiconductor channel layer and honey as gate dielectric. The measured gate capacitance of honey using LCR meter was measured as 2.15 μF/ cm2 while the dielectric constant is 20.50. The semiconductor layer was deposited using Aerosol assisted chemical vapour deposition and annealed in open air at 250 on an etched region about the middle of a 4×4 mm FTO glass substrate with the source and drain electrode region defined by the etching and masking at the two ends of the substrate. Iridium was used as the gate electrode while a copper wire was masked to the source and drain region to create electrode contact. The Profilometry, X-ray diffraction, Scanning electron microscope, Energy dispersive X-ray spectroscopy, Hall Effect measurement and digital multimeters were used to characterise the device. The SnS thin film was found to be polycrystalline consisting of Sn and S elements with define grains, an optical band of 1.42 eV and of 0.4 μm thickness. The transistor operated with a p type channel conductivity in a depletion mode with a field effect mobility of 16.67 cm2/Vs, cut-off voltage of 1.6 V, Drain saturation current of1.35μA, a transconductance of -809.61 nA/V and a sub threshold slope of -1.6 Vdec-1 which is comparable to standard specifications in Electronics Data sheets. Positive gate bias results in a shift in the cut off voltage due to charge trapping in the channel/dielectric interface.

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