Controllable Polarization‐Insensitive and Large‐Angle Beam Switching with Phase‐Change Metasurfaces

2022 ◽  
pp. 2101847
Author(s):  
Arash Nemati ◽  
Guanghui Yuan ◽  
Jie Deng ◽  
Aihong Huang ◽  
Weide Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
Large Angle ◽  
Polarization Insensitive ◽  
Beam Switching

Narrowband-to-broadband switchable and polarization-insensitive terahertz metasurface absorber enabled by phase-change material

2021 ◽  
Author(s):  
Seyed Hadi Badri ◽  
M. M. Gilarlue ◽  
Sanam SaeidNahaei ◽  
Jong Su KIM
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Ground Plane ◽  
Metallic State ◽  
Broadband Absorber ◽  
Broadband Absorption ◽  
Terahertz Absorber ◽  
Wide Range ◽  
Polarization Insensitive ◽  
Change Material

Abstract A terahertz absorber with controllable and switchable bandwidth and insensitive to polarization is of great interest. Here, we propose and demonstrate a metasurface absorber with switchable bandwidth based on a phase-change material of vanadium dioxide (VO2) and verify its performance by the finite element method simulations. The metasurface absorber is composed of a hybrid cross fractal as a resonator separated from a gold ground-plane by a polyimide spacer. Switching from narrowband to broadband absorber is achieved via connecting VO2 patches to the gold first-order cross fractal converting the resonator to a third-order cross fractal. In the insulator phase of VO2, the main narrowband absorption occurs at the frequency of 6.05 THz with a 0.99 absorption and a full-width half-maximum (FWHM) of 0.35 THz. Upon insulator-to-metal transition of VO2, the metasurface achieves a broadband absorption with the FWHM of 6.17 THz. The simulations indicate that by controlling the partial phase-transition of VO2, we can tune the bandwidth and absorption level of the absorber. Moreover, the designed absorber is insensitive to polarization due to symmetry and works well for a very wide range of incident angles. In the metallic state of VO2, the absorber has an absorption exceeding 0.5 in the 3.57-8.45 THz frequency range with incident angles up to 65°.

Non-volatile polarization-insensitive 1×2 silicon optical switch using phase-change materials

2021 ◽  
Vol 479 ◽  
pp. 126407
Author(s):  
Wei Liang ◽  
Weiwei Chen ◽  
Pengjun Wang ◽  
Shixun Dai ◽  
Bohao Zhang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Optical Switch ◽  
Polarization Insensitive

Parallel Detection of Electron Energy Loss Spectra in Direct Mode

1990 ◽  
Vol 48 (2) ◽  
pp. 82-83
Author(s):  
Eckhard Quandt ◽  
Stephan laBarré ◽  
Andreas Hartmann ◽  
Heinz Niedrig
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Energy Resolution ◽  
Large Angle ◽  
Maximum Energy ◽  
Semiconductor Detectors ◽  
Parallel Detection ◽  
Photodiode Arrays ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

Large-angle convergent-beam electron-diffraction study of coherent precipitates and decorated dislocations

1996 ◽  
Vol 54 ◽  
pp. 1002-1004
Author(s):  
J.M.K. Wiezorek ◽  
H.L. Fraser
Keyword(s):  
Electron Diffraction ◽  
Angular Resolution ◽  
Large Angle ◽  
Electron Diffraction Study ◽  
Convergent Beam Electron Diffraction ◽  
Crystal Defects ◽  
High Angular Resolution ◽  
Beam Electron ◽  
Diffraction Plane ◽  
Convergent Beam

Conventional methods of convergent beam electron diffraction (CBED) use a fully converged probe focused on the specimen in the object plane resulting in the formation of a CBED pattern in the diffraction plane. Large angle CBED (LACBED) uses a converged but defocused probe resulting in the formation of ‘shadow images’ of the illuminated sample area in the diffraction plane. Hence, low-spatial resolution image information and high-angular resolution diffraction information are superimposed in LACBED patterns which enables the simultaneous observation of crystal defects and their effect on the diffraction pattern. In recent years LACBED has been used successfully for the investigation of a variety of crystal defects, such as stacking faults, interfaces and dislocations. In this paper the contrast from coherent precipitates and decorated dislocations in LACBED patterns has been investigated. Computer simulated LACBED contrast from decorated dislocations and coherent precipitates is compared with experimental observations.

Structural analysis of a Σ5 grain boundary in YBa2Cu3O7δ

1993 ◽  
Vol 51 ◽  
pp. 942-943
Author(s):  
J.-Y. Wang ◽  
Y. Zhu ◽  
A.H. King ◽  
M. Suenaga
Keyword(s):  
Grain Boundary ◽  
Lattice Mismatch ◽  
Weak Link ◽  
Coincidence Site Lattice ◽  
Large Angle ◽  
Dislocation Core ◽  
Superconducting Order Parameter ◽  
Outstanding Problem ◽  
Transmission Electron

One outstanding problem in YBa2Cu3O7−δ superconductors is the weak link behavior of grain boundaries, especially boundaries with a large-angle misorientation. Increasing evidence shows that lattice mismatch at the boundaries contributes to variations in oxygen and cation concentrations at the boundaries, while the strain field surrounding a dislocation core at the boundary suppresses the superconducting order parameter. Thus, understanding the structure of the grain boundary and the grain boundary dislocations (which describe the topology of the boundary) is essential in elucidating the superconducting characteristics of boundaries. Here, we discuss our study of the structure of a Σ5 grain boundary by transmission electron microscopy. The characterization of the structure of the boundary was based on the coincidence site lattice (CSL) model.Fig.l shows two-beam images of the grain boundary near the projection. An array of grain boundary dislocations, with spacings of about 30nm, is clearly visible in Fig. 1(a), but invisible in Fig. 1(b).

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

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