Ultrahigh EQE (38.1%) Deep‐UV Photodiode with Chemically‐Doped Graphene as Hole Transport Layer

2021 ◽  
pp. 2102329
Author(s):  
Titao Li ◽  
Siqi Zhu ◽  
Lemin Jia ◽  
Richeng Lin ◽  
Wei Zheng ◽  
...  
2017 ◽  
Vol 9 (9) ◽  
pp. 1616-1625 ◽  
Author(s):  
Amirhossein Hasani ◽  
Jaber Nasrollah Gavgani ◽  
Reza Mohammadi Pashaki ◽  
Siamak Baseghi ◽  
Alireza Salehi ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Luis Lanzetta ◽  
Thomas Webb ◽  
Nourdine Zibouche ◽  
Xinxing Liang ◽  
Dong Ding ◽  
...  

AbstractTin perovskites have emerged as promising alternatives to toxic lead perovskites in next-generation photovoltaics, but their poor environmental stability remains an obstacle towards more competitive performances. Therefore, a full understanding of their decomposition processes is needed to address these stability issues. Herein, we elucidate the degradation mechanism of 2D/3D tin perovskite films based on (PEA)0.2(FA)0.8SnI3 (where PEA is phenylethylammonium and FA is formamidinium). We show that SnI4, a product of the oxygen-induced degradation of tin perovskite, quickly evolves into iodine via the combined action of moisture and oxygen. We identify iodine as a highly aggressive species that can further oxidise the perovskite to more SnI4, establishing a cyclic degradation mechanism. Perovskite stability is then observed to strongly depend on the hole transport layer chosen as the substrate, which is exploited to tackle film degradation. These key insights will enable the future design and optimisation of stable tin-based perovskite optoelectronics.


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