Ferroelectricity Tailored Valley Splitting in Monolayer WTe2 /YMnO3 Heterostructures: A Route toward Electrically Controlled Valleytronics

2017 ◽  
Vol 3 (10) ◽  
pp. 1700245 ◽  
Author(s):  
Yan Song ◽  
Xiaocha Wang ◽  
Wenbo Mi
Keyword(s):  
Valley Splitting

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

Valley splitting in Si inversion layers

1982 ◽  
Vol 113 (1-3) ◽  
pp. A21
Author(s):  
K.C. Woo ◽  
P.J. Stiles
Keyword(s):  
Valley Splitting

Induced valley splitting in monolayer MoS2 by an antiferromagnetic insulating CoO(111) substrate

2018 ◽  
Vol 98 (23) ◽  
Author(s):  
Guang Yang ◽  
Jia Li ◽  
Hongran Ma ◽  
Yanmin Yang ◽  
Congcong Li ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Valley Splitting

scholarly journals Electric-field tuning of the valley splitting in silicon corner dots

2018 ◽  
Vol 113 (5) ◽  
pp. 053104 ◽  
Author(s):  
D. J. Ibberson ◽  
L. Bourdet ◽  
J. C. Abadillo-Uriel ◽  
I. Ahmed ◽  
S. Barraud ◽  
...  
Keyword(s):  
Electric Field ◽  
Valley Splitting

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

scholarly journals Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

2005 ◽  
Vol 44 (4B) ◽  
pp. 2187-2190 ◽  
Author(s):  
Anisur Rahman ◽  
Gerhard Klimeck ◽  
Mark Lundstrom ◽  
Timothy B. Boykin ◽  
Nizami Vagidov
Keyword(s):  
Scaling Limit ◽  
Nanoscale Devices ◽  
Valley Splitting

Strong valley splitting in d 0 two-dimensional SnO induced by magnetic proximity effect

2021 ◽  
Vol 32 (22) ◽  
pp. 225201
Author(s):  
Changcheng Zhang ◽  
Shuo Zhang ◽  
Yifeng Lin ◽  
Junguang Tao ◽  
Lixiu Guan
Keyword(s):  
Proximity Effect ◽  
Two Dimensional ◽  
Valley Splitting ◽  
Magnetic Proximity Effect
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