Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells
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AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.
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1997 ◽
Vol 11
(09)
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pp. 1195-1207
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2004 ◽
Vol 18
(27n29)
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pp. 3835-3838
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1992 ◽
Vol 69
(5)
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pp. 848-851
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1994 ◽
Vol 52
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pp. 736-737
1990 ◽
Vol 48
(4)
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pp. 624-625
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