Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite

2021 ◽  
pp. 2101143
Author(s):  
Jinyong Li ◽  
Jie Hou ◽  
Bin Zhang ◽  
Yu Chen
2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550003 ◽  
Author(s):  
Murali Lingalugari ◽  
Pik-Yiu Chan ◽  
Evan Heller ◽  
Faquir Jain

In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.


2007 ◽  
Vol 997 ◽  
Author(s):  
Chunglin Tsai ◽  
Ricky J. Tseng ◽  
Yang Yang ◽  
Cengiz S. Ozkan

AbstractHybrid virus/inorganic nanoscrystals are considered as important building blocks towards new types of functionality for electronic devices. We use tobacco mosaic viruses to assemble platinum nanoparticles and conjugate with quantum dots. By forming a thin hybrid nanocomposite layer in the crossbar junction, we show electronic memory effect based on electrical bistable states with a large on/off ratio, and long retention time. Such hybrid bio-inorganic nanostructures for the first time are promising for future bio-inspired nanoelectronics.


2018 ◽  
Vol 18 (2) ◽  
pp. 180-186 ◽  
Author(s):  
Sae-Wan Kim ◽  
In-Su Jung ◽  
Byoung-Ho Kang ◽  
Jin-Beom Kwon ◽  
Jae-Sung Lee ◽  
...  

ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12401-12415 ◽  
Author(s):  
Leung Chan ◽  
Pan Gao ◽  
Wenhua Zhou ◽  
Chaoming Mei ◽  
Yanyu Huang ◽  
...  

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  

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