Flexible Nanoporous WO3–x Nonvolatile Memory Device

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  
2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 53873-53881 ◽  
Author(s):  
Achu Chandran ◽  
Jai Prakash ◽  
Jitendra Gangwar ◽  
Tilak Joshi ◽  
Avanish Kumar Srivastava ◽  
...  

A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.


2010 ◽  
Vol 13 (3) ◽  
pp. H49 ◽  
Author(s):  
Chih-Wei Hu ◽  
Ting-Chang Chang ◽  
Chun-Hao Tu ◽  
Yu-Hao Huang ◽  
Chao-Cheng Lin ◽  
...  

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