Insights into the Effects of RbF‐Post‐Deposition Treatments on the Absorber Surface of High Efficiency Cu(In,Ga)Se 2 Solar Cells and Development of Analytical and Machine Learning Process Monitoring Methodologies Based on Combinatorial Analysis

2022 ◽  
pp. 2103163
Author(s):  
Robert Fonoll‐Rubio ◽  
Stefan Paetel ◽  
Enric Grau‐Luque ◽  
Ignacio Becerril‐Romero ◽  
Rafael Mayer ◽  
...  
2012 ◽  
Vol 14 (35) ◽  
pp. 12094 ◽  
Author(s):  
Weifei Fu ◽  
Ye Shi ◽  
Weiming Qiu ◽  
Ling Wang ◽  
Yaxiong Nan ◽  
...  

Author(s):  
Chenglong She ◽  
Qicheng Huang ◽  
Cong Chen ◽  
Yue Jiang ◽  
Zhen Fan ◽  
...  

Experimental search for high-efficiency perovskite solar cells (PSCs) is an extremely challenging task due to the vast search space comprising the materials, device structures, and preparation methods. Herein, by using...


2021 ◽  
pp. 2003783
Author(s):  
Mingrui He ◽  
Xian Zhang ◽  
Jialiang Huang ◽  
Jianjun Li ◽  
Chang Yan ◽  
...  

2014 ◽  
Vol 115 (6) ◽  
pp. 064502 ◽  
Author(s):  
Naba R. Paudel ◽  
Matthew Young ◽  
Paul J. Roland ◽  
Randy J. Ellingson ◽  
Yanfa Yan ◽  
...  

2016 ◽  
Vol 120 (6) ◽  
pp. 063106 ◽  
Author(s):  
S. A. Jensen ◽  
S. Glynn ◽  
A. Kanevce ◽  
P. Dippo ◽  
J. V. Li ◽  
...  

2020 ◽  
Vol 11 ◽  
pp. 12
Author(s):  
Ramis Hertwig ◽  
Shiro Nishiwaki ◽  
Mario Ochoa ◽  
Shih-Chi Yang ◽  
Thomas Feurer ◽  
...  

High efficiency chalcopyrite thin film solar cells generally use chemical bath deposited CdS as buffer layer. The transition to Cd-free buffer layers, ideally by dry deposition methods is required to decrease Cd waste, enable all vacuum processing and circumvent optical parasitic absorption losses. In this study, Zn1−xMgxO thin films were deposited by atomic layer deposition (ALD) as buffer layers on co-evaporated Cu(In,Ga)Se2 (CIGS) absorbers. A specific composition range was identified for a suitable conduction band alignment with the absorber surface. We elucidate the critical role of the CIGS surface preparation prior to the dry ALD process. Wet chemical surface treatments with potassium cyanide, ammonium hydroxide and thiourea prior to buffer layer deposition improved the device performances. Additional in-situ surface reducing treatments conducted immediately prior to Zn1−xMgxO deposition improved device performance and reproducibility. Devices were characterised by (temperature dependant) current-voltage and quantum efficiency measurements with and without light soaking treatment. The highest efficiency was measured to be 18%.


Author(s):  
Hamidou TANGARA ◽  
Yulu He ◽  
Muhammad Monirul Islam ◽  
Shogo ISHIZUKA ◽  
Takeaki Sakurai

Abstract Heat light soaking (HLS) has been known to impact the photovoltaic parameters of Cu(In,Ga)Se2 (CIGS) solar cells for a long time. Recently, the focus shifted to the effect of the procedure on alkali fluoride-treated CIGS. Here, we investigate the impact of long-term HLS on the open-circuit (VOC) loss in high-efficiency CIGS with potassium fluoride (KF) and sodium fluoride (NaF) post-deposition treatment (PDT). HLS is shown to increase the net doping density, however, the subsequent improvement of the VOC is lower than expected. Using an analysis based on the SQ theory, we show that HLS reduces the nonradiative recombination rate in the bulk but increases the one at the interface. We present a model to explain the increase of interface recombination. We further demonstrate that a combination of HLS and KF/NaF-PDT is necessary to enhance the positive impacts of HLS and mitigate the detrimental ones leading to high-efficiency CIGS devices (22%).


2013 ◽  
Vol 745-746 ◽  
pp. 478-484 ◽  
Author(s):  
Feng Jiao Mei ◽  
Qing Cui Wan ◽  
An Ping ◽  
Hua Liao ◽  
Xue Qing Xu ◽  
...  

CuInS2quantum dots have been deposited onto mesoporous TiO2films on TCO glass substrate via successive ionic layer absorption and reaction process (SILAR) by using three different routes and post-deposition annealing in sulfur ambiance. The influence of the deposition sequence of the In-S and Cu-S on the microstructure of CuInS2sensitized TiO2electrodes and the photovoltaic performance of the solar cells have been investigated. The microstructure of CuInS2sensitized TiO2electrodes has been investigated by using X-ray diffraction (XRD), Raman spectra, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) analysis. The optical absorption property of the electrodes has been detected by using UV-Vis spectroscopy, and the photovoltaic performance of CuInS2quantum dots sensitized solar cells has been determined by cyclic voltammetry measurement. It has been found that when the Cu-S was deposited prior to In-S, the chalcopyrite phase CuInS2could not be observed due to the sublimation of InxS during the annealing under low pressure. A small amount of CuInS2has been detected when In-S and Cu-S was deposited alternately onto the TiO2films. However, chalcopyrite phase CuInS2can be obtained when In-S was deposited prior to Cu-S, and a relative high efficiency of ca. 0.92% (Voc= 0.35V, Jsc= 8.49 mA·cm-2, FF = 0.31) has been achieved via SILAR without KCN treatment and rapid thermal annealing.


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