4D Printing: Enabling Technology for Microrobotics Applications

The advancement in 3D printing has led to the rapid growth of 4D printing technology. Adding time, as the fourth dimension, this technology ushered the potential of a massive evolution in fields of biomedical technologies, space applications, deployable structures, manufacturing industries, and so forth. This technology performs ingenious design, using smart materials to create advanced forms of the 3-D printed specimen. Improvements in Computer-aided design, additive manufacturing process, and material science engineering have ultimately favored the growth of 4-D printing innovation and revealed an effective method to gather complex 3-D structures. Contrast to all these developments, novel material is still a challenging sector. However, this short review illustrates the basic of 4D printing, summarizes the stimuli responsive materials properties, which have prominent role in the field of 4D technology. In addition, the practical applications are depicted and the potential prospect of this technology is put forward.

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Plasma contacting - An enabling technology

10.2514/6.1989-677 ◽

1989 ◽

Cited By ~ 2

Author(s):

JOHN WILLIAMS ◽

PAUL WILBUR

Keyword(s):

Enabling Technology

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Room Temperature Flow Electrochemistry as a Means of Retaining the “Memory of Chirality” via Hofer Moest Type Reaction

10.26434/chemrxiv.11516967.v2 ◽

2020 ◽

Author(s):

Tomas Hardwick ◽

Rossana Cicala ◽

Nisar Ahmed

Keyword(s):

Continuous Flow ◽

Room Temperature ◽

Biological Activities ◽

Supporting Electrolyte ◽

Enantiomeric Excess ◽

Flow Chemistry ◽

Batch Processes ◽

Enabling Technology ◽

Chiral Compounds ◽

Memory Of Chirality

<p>Many chiral compounds have become of great interest to the pharmaceutical industry as they possess various biological activities. Concurrently, the concept of “memory of chirality” has been proven as a powerful tool in asymmetric synthesis, while flow chemistry has begun its rise as a new enabling technology to add to the ever increasing arsenal of techniques available to the modern day chemist. Here, we have employed a new simple electrochemical microreactor design to oxidise an L-proline derivative at room temperature in continuous flow. Flow performed in microreactors offers up a number of benefits allowing reactions to be performed in a more convenient and safer manner, and even allow electrochemical reactions to take place without a supporting electrolyte due to a very short interelectrode distance. By the comparison of electrochemical oxidations in batch and flow we have found that continuous flow is able to outperform its batch counterpart, producing a good yield (71%) and a better enantiomeric excess (64%) than batch with a 98% conversion. We have, therefore, provided evidence that continuous flow chemistry has the potential to act as a new enabling technology to replace some aspects of conventional batch processes. </p>

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Dental 4D Printing: An Innovative Approach

10.30771/2018.4 ◽

2018 ◽

Author(s):

Hosamuddin Hamza

Keyword(s):

Innovative Approach ◽

4D Printing

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Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0534 ◽

2004 ◽

Author(s):

Valery Ray

Keyword(s):

Side Effects ◽

Aspect Ratio ◽

Integrated Circuits ◽

High Aspect Ratio ◽

Focused Ion Beam ◽

Ion Beam ◽

Enabling Technology ◽

Si Substrate ◽

Ion Beam Modification ◽

The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

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A Novel FSK Generator Using a Second Generation Current Controlled Conveyor

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681209666191116121454 ◽

2020 ◽

Vol 10 (6) ◽

pp. 902-908

Author(s):

Syed Zahiruddin ◽

Avireni Srinivasulu ◽

Musala Sarada

Keyword(s):

Biomedical Applications ◽

Second Generation ◽

Current Mode ◽

Enabling Technology ◽

Active Device ◽

Passive Components ◽

Existing Structures ◽

Generator Circuit ◽

Shift Keying ◽

The Times

Objective: The interest concern towards the development of enabling technology towards new current mode devices has forced the designers and researchers for the invention of devices, which has having the characteristics like such as low power, robustness, compactness, efficiency and scalability. Methods: Second Generation Current Controlled Conveyor (CCCII) is the prevailing current mode device of the times today. Since its invention by A. Fabre, it has prominent applications in the field of analog signal processing and in biomedical applications too. In this manuscript, CCCII is used as an enabling device to design a Frequency Shift Keying (FSK) Generator. Results: The proposed topology is designed using a single active device CCCII with least passive components. The circuit enjoys the features of like electronic tunability of frequency using the bias current. Conclusion: It can be concluded that the FSK generator circuit designed using single CCCII confers better results in contrast to the existing structures. The maximum power consumption is 0.196 mW. The proposed circuit has the benefit of simple configuration, which is very much proficient for IC fabrication.

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