FPGAs as an enabling technology in high-speed switched serial backplane applications

2005 ◽  
Author(s):  
P. Burns
Keyword(s):  
High Speed ◽  
Enabling Technology

A Low Power - High Speed CNTFETs Based Full Adder Cell With Overflow Detection

2019 ◽  
Vol 11 (1) ◽  
pp. 80-87 ◽  
Author(s):  
Jitendra Kumar Saini ◽  
Avireni Srinivasulu ◽  
Renu Kumawat
Keyword(s):  
Mass Production ◽  
High Speed ◽  
Field Effect Transistor ◽  
Full Adder ◽  
Enabling Technology ◽  
Look Ahead ◽  
Ripple Carry Adder ◽  
Effect Transistor ◽  
Cad Tool ◽  
Power Delay Product

The transformation from the development of enabling technology to mass production of consumer-centric semiconductor products has empowered the designers to consider characteristics like robustness, compactness, efficiency, and scalability of the product as implicit pre-cursors. The Carbon Nanotube Field Effect Transistor (CNFET) is the present day technology. In this manuscript, we have used CNFET as the enabling technology to design a 1-bit Full Adder (1b-FA16) with overflow detection. The proposed 1b-FA16 is designed using 16 transistors. Finally, the proposed 1b-FA16 is further used to design a Ripple Carry Adder (RCA), Carry Look Ahead Adder (CLA) circuit and RCA with overflow bit detection. Methods and Results: The proposed 1b-FA16 circuit was designed with CNFET technology simulated at 32 nm with a voltage supply of +0.9 V using the Cadence Virtuoso CAD tool. The model used is Stanford PTM. Comparison of the existing full adder designs with the proposed 1b-FA16 design was done to validate the improvements in terms of power, delay and Power Delay Product (PDP). Table 2, shows the results of comparison for the proposed 1b-FA16 with the existing full adder designs implemented using CNFET for parameters like power, delay and power delay product. Conclusion: It can be concluded that the proposed 1b-FA16 yielded better results as compared to the existing full adder designs implemented using CNFET. The improvement in power, delay and power delay product was approximately 11%, 9% and 24% respectively. Hence, the proposed circuit implemented using CNFET gives a substantial rate of improvements over the existing circuits.

GaN-on-Silicon Evaluation for High-Power MMIC Applications

2012 ◽  
Vol 711 ◽  
pp. 223-227 ◽  
Author(s):  
Alessio Pantellini ◽  
Claudio Lanzieri ◽  
Antonio Nanni ◽  
Andrea Bentini ◽  
Walter Ciccognani ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Low Cost ◽  
Enabling Technology ◽  
Passive Components ◽  
Active Devices ◽  
Commercial Market ◽  
Gan On Si ◽  
Rf Performance ◽  
Si Wafer

Today microwave market has identified GaN-HEMT technology as a strategic enabling technology for next generation MMICs to be implemented in high performance RF sub-assemblies such as T/R Modules, Solid State Power Transmitters, Compact Receivers, High Speed Communications. To allow commercial market entry of GaN technology, a tradeoff between high RF performance and low cost is mandatory and a possible solution is represented by GaN-on-Silicon substrate. In this scenario the evaluation of FETs RF performance and losses of passive components are demanding to understand the feasibility of GaN MMIC on Si. Following such approach, in SELEX Sistemi Integrati a 4 inches GaN-on-Si wafer containing discrete active devices and passive components has been fabricated with the 50μm Si thickness. RF FETs performance demonstrates an output power of 4W/mm @ 3GHz, while passive components characterization exhibits similar behavior of GaN SiC passive elements up to C Band.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Scanning x-ray fluorescence microscopy and principal component analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1752-1753
Author(s):  
Brian Cross
Keyword(s):  
Principal Component Analysis ◽  
Fluorescence Microscopy ◽  
Spatial Resolution ◽  
High Speed ◽  
Image Acquisition ◽  
Principal Component ◽  
Fluorescence Microscope ◽  
Acquisition Rate ◽  
X Ray ◽  
Speed Up

A relatively new entry, in the field of microscopy, is the Scanning X-Ray Fluorescence Microscope (SXRFM). Using this type of instrument (e.g. Kevex Omicron X-ray Microprobe), one can obtain multiple elemental x-ray images, from the analysis of materials which show heterogeneity. The SXRFM obtains images by collimating an x-ray beam (e.g. 100 μm diameter), and then scanning the sample with a high-speed x-y stage. To speed up the image acquisition, data is acquired "on-the-fly" by slew-scanning the stage along the x-axis, like a TV or SEM scan. To reduce the overhead from "fly-back," the images can be acquired by bi-directional scanning of the x-axis. This results in very little overhead with the re-positioning of the sample stage. The image acquisition rate is dominated by the x-ray acquisition rate. Therefore, the total x-ray image acquisition rate, using the SXRFM, is very comparable to an SEM. Although the x-ray spatial resolution of the SXRFM is worse than an SEM (say 100 vs. 2 μm), there are several other advantages.

Image quality vs data obtainment in biological electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 42-43
Author(s):  
J. E. Johnson
Keyword(s):  
Electron Microscopy ◽  
Endoplasmic Reticulum ◽  
Electron Beam ◽  
Image Quality ◽  
High Speed ◽  
Early Period ◽  
Early Years ◽  
Fluorescent Screen ◽  
Embedding Medium

In the early years of biological electron microscopy, scientists had their hands full attempting to describe the cellular microcosm that was suddenly before them on the fluorescent screen. Mitochondria, Golgi, endoplasmic reticulum, and other myriad organelles were being examined, micrographed, and documented in the literature. A major problem of that early period was the development of methods to cut sections thin enough to study under the electron beam. A microtome designed in 1943 moved the specimen toward a rotary “Cyclone” knife revolving at 12,500 RPM, or 1000 times as fast as an ordinary microtome. It was claimed that no embedding medium was necessary or that soft embedding media could be used. Collecting the sections thus cut sounded a little precarious: “The 0.1 micron sections cut with the high speed knife fly out at a tangent and are dispersed in the air. They may be collected... on... screens held near the knife“.

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