Early Stages of Oriented Attachment: Formation of Twin ZnO Nanorods under Microwave Irradiation

2012 ◽  
Vol 18 (42) ◽  
pp. 13265-13268 ◽  
Author(s):  
Monica Distaso ◽  
Mirza Mačković ◽  
Erdmann Spiecker ◽  
Wolfgang Peukert
2015 ◽  
Vol 31 ◽  
pp. 380-385 ◽  
Author(s):  
A. Henni ◽  
A. Merrouche ◽  
L. Telli ◽  
A. Azizi ◽  
R. Nechache
Keyword(s):  

2013 ◽  
Vol 13 (4) ◽  
pp. 3068-3073 ◽  
Author(s):  
P. Suresh ◽  
J. Judith Vijaya ◽  
L. John Kennedy

2012 ◽  
Vol 60 (10) ◽  
pp. 1644-1648 ◽  
Author(s):  
Faheem Ahmed ◽  
Shalendra Kumar ◽  
Nishat Arshi ◽  
M. S. Anwar ◽  
Si Nae Heo ◽  
...  

2014 ◽  
Vol 118 (26) ◽  
pp. 14629-14639 ◽  
Author(s):  
A. Pimentel ◽  
D. Nunes ◽  
P. Duarte ◽  
J. Rodrigues ◽  
F. M. Costa ◽  
...  

2011 ◽  
Vol 04 (01) ◽  
pp. 1-5 ◽  
Author(s):  
FAHEEM AHMED ◽  
SHALENDRA KUMAR ◽  
NISHAT ARSHI ◽  
M. S. ANWAR ◽  
BON HEUN KOO ◽  
...  

ZnO nanorods assembled in flower shaped morphology have been successfully synthesized using low power microwave irradiation in a very short duration. The diameter and length of the rods were within 150–190 nm (tip diameter ~15 nm) and 2 μm, respectively, with an aspect ratio of 20–22. The synthesized nanorods were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), Fourier transform infrared microscopy (FT-IR), photoluminescence (PL) and magnetization measurements. The XRD and FT-IR results indicate that ZnO nanorods have the pure wurtzite structure with lattice parameters a and c of 3.254 and 5.197 Å, respectively. The selected area electron diffraction (SAED) pattern reveals that the ZnO nanorods are single crystal in nature and grow along [001] plane. Room-temperature PL spectrum of the as-grown ZnO nanorods shows a near-band-edge (NBE) emission peak and defect induced emissions. Magnetization measurements indicate that ZnO nanorods exhibit room temperature ferromagnetism with remanent magnetization (M r ) and coercivity (H c ) about 2.92 × 10-4 (emu/g) and 29.75 Oe , respectively, which may be due to the presence of defects in the ZnO nanorods.


2014 ◽  
Vol 1633 ◽  
pp. 75-80 ◽  
Author(s):  
Nagendra Pratap Singh ◽  
S.A. Shivashankar ◽  
Rudra Pratap

ABSTRACTBecause of its large direct band gap of 3.37 eV and high exciton binding energy (∼60 meV), which can lead to efficient excitonic emission at room temperature and above, ZnO nanostructures in the würtzite polymorph are an ideal choice for electronic and optoelectronic applications. Some of the important parameters in this regard are free carrier concentration, doping compensation, minority carrier lifetime, and luminescence efficiency, which are directly or indirectly related to the defects that, in turn, depend on the method of synthesis. We report the synthesis of undoped ZnO nanorods through microwave irradiation of an aqueous solution of zinc acetate dehydrate [Zn(CH3COO)2. 2H2O] and KOH, with zinc acetate dihydrate acting as both the precursor to ZnO and as a self-capping agent. Upon exposure of the solution to microwaves in a domestic oven, ZnO nanorods 1.5 µm -3 µm and 80 nm in diameter are formed in minutes. The ZnO structures have been characterised in detail by X-ray diffraction (XRD), selective area electron diffraction (SAED) and high-resolution scanning and transmission microscopy, which reveal that each nanorod is single-crystalline. Optical characteristics of the nanorods were investigated through photoluminescence (PL) and cathodoluminescence (CL). These measurements reveal that defect state-induced emission is prominent, with a broad greenish yellow emission. CL measurements made on a number of individual nanorods at different accelerating voltages for the electrons show CL intensity increases with increasing accelerating voltage. A red shift is observed in the CL spectra as the accelerating voltage is raised, implying that emission due to oxygen vacancies dominates under these conditions and that interstitial sites can be controlled with the accelerating voltage of the electron beam. Time-resolved fluorescence (TRFL) measurements yield a life time (τ) of 9.9 picoseconds, indicating that ZnO nanorods synthesized by the present process are excellent candidates for optoelectronic devices.


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