Tuning the Electronic Properties in Ruthenium-Quinone Complexes through Metal Coordination and Substitution at the Bridge

The use of photoresponsive hexatriene architectures to regulate chemical reactivity is described. The major focus of this report is how the two isomers of dithienylethene derivatives exhibit different steric and electronic properties. The ring-open form is structurally flexible, and the thiophene rings are electronically insulated from each other, while the ring-closed counterpart has a rigid structure, and there is a linear π-conjugated pathway along the molecular backbone. Representative examples that demonstrate how these photoswitches can be used to influence metal coordination, catalysis, and nucleophilicity are highlighted in this overview.

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Metal–organic Kagome lattices M3(2,3,6,7,10,11-hexaiminotriphenylene)2 (M = Ni and Cu): from semiconducting to metallic by metal substitution

Physical Chemistry Chemical Physics ◽

10.1039/c4cp05328a ◽

2015 ◽

Vol 17 (8) ◽

pp. 5954-5958 ◽

Cited By ~ 58

Author(s):

Shuang Chen ◽

Jun Dai ◽

Xiao Cheng Zeng

Keyword(s):

Electronic Properties ◽

Metal Coordination ◽

Coordination Geometry ◽

Metal Substitution ◽

Metal Organic

The metal coordination, geometry of the in-plane network, and electronic properties of 2D M3(HITP)2 Kagome lattices are modified by metal substitution.

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Core and Double Bond Functionalization of Cyclopentadithiophene- Phosphaalkenes

10.26434/chemrxiv.12318764 ◽

2020 ◽

Author(s):

Jordann A.L. Wells ◽

Muhammad Anwar Shameem ◽

Arvind Kumar Gupta ◽

Andreas Orthaber

Keyword(s):

Double Bond ◽

Solid State ◽

Electronic Properties ◽

Building Block ◽

Metal Coordination ◽

Bond Functionalization ◽

Electronic Tuning ◽

Optical And Electronic Properties ◽

Donor And Acceptor ◽

Solid State Structures

The heterofulvenoid cyclopentadithiophene-phosphaalkene is a versatilie building block for opto-electronic tuning with donor and acceptor moieties. Both the annulated thienyl rings and the phosphaalkene bond can be functionalised using a variety of chemical transfomations, e.g. forming C-C, C-E (E = Si, Br) bonds or oxidation and metal coordination, respectively. Solid-state structures, optical and electronic properties are probed theoretically and experimentally, illustrating the opto-electronic tailoring opportunities at this motif.

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The silver(I) complex [HB{3-(CF3),5-(CH3)Pz}3]AgNCCH3supported by a partially fluorinated scorpionate ligand

Acta Crystallographica Section C Structural Chemistry ◽

10.1107/s2053229616006744 ◽

2016 ◽

Vol 72 (11) ◽

pp. 853-856 ◽

Cited By ~ 1

Author(s):

H. V. Rasika Dias ◽

Naveen Kulkarni

Keyword(s):

Coordination Chemistry ◽

Single Crystal ◽

Diffraction Analysis ◽

Electronic Properties ◽

Coordination Sphere ◽

Metal Coordination ◽

X Ray Diffraction ◽

X Ray ◽

Scorpionate Ligand

Tris(pyrazolyl)borates are used extensively in metal coordination chemistry and belong to a class of ligands generally referred to as scorpionates. The steric and electronic properties of these ligands can be modified quite easily by varying the substituents on the 3-, 4-, and 5-positions of the pyrazolyl moieties on the B atom. Fluorinated tris(pyrazolyl)borates are useful in the stabilization of rare silver(I) complexes. The silver(I) adduct (acetonitrile-κN){tris[5-methyl-3-(trifluoromethyl)pyrazol-1-yl-κN2]hydroborato}silver(I), [Ag(C15H13BF9N6)(CH3CN)] or [HB{3-(CF3),5-(CH3)Pz}3]AgNCCH3, was obtained by treating [HB{3-(CF3),5-(CH3)Pz}3]Na with CF3SO3Ag in the presence of acetonitrile, and was isolated in 85% yield. Single-crystal X-ray diffraction analysis reveals that the AgIcenter has a pseudo-tetrahedral all-nitrogen coordination sphere, and is supported by a tris(pyrazolyl)borate ligand that binds to the AgIcenter in a κ3-fashion.

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Core and Double Bond Functionalization of Cyclopentadithiophene- Phosphaalkenes

10.26434/chemrxiv.12318764.v1 ◽

2020 ◽

Author(s):

Jordann A.L. Wells ◽

Muhammad Anwar Shameem ◽

Arvind Kumar Gupta ◽

Andreas Orthaber

Keyword(s):

Double Bond ◽

Solid State ◽

Electronic Properties ◽

Building Block ◽

Metal Coordination ◽

Bond Functionalization ◽

Electronic Tuning ◽

Optical And Electronic Properties ◽

Donor And Acceptor ◽

Solid State Structures

The heterofulvenoid cyclopentadithiophene-phosphaalkene is a versatilie building block for opto-electronic tuning with donor and acceptor moieties. Both the annulated thienyl rings and the phosphaalkene bond can be functionalised using a variety of chemical transfomations, e.g. forming C-C, C-E (E = Si, Br) bonds or oxidation and metal coordination, respectively. Solid-state structures, optical and electronic properties are probed theoretically and experimentally, illustrating the opto-electronic tailoring opportunities at this motif.

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Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176149 ◽

1990 ◽

Vol 48 (4) ◽

pp. 602-603

Author(s):

J.M. Bonar ◽

R. Hull ◽

R. Malik ◽

R. Ryan ◽

J.F. Walker

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Gaas Substrate ◽

Critical Thickness ◽

Lattice Mismatch ◽

Band Offset ◽

Misfit Dislocations ◽

Gaas Substrates ◽

Gaas Structure ◽

Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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