Designing Tridentate Ligands for Ruthenium(II) Complexes with Prolonged Room Temperature Luminescence Lifetimes

With the use of model compounds of widely different functionality, it was found that a 1% α-cyclodextrin/NaCl mixture could be used in place of an 80% α-cyclodextrin/NaCl mixture to obtain solid surface room-temperature fluorescence (RTF) and phosphorescence (RTP) data. Analytical figures of merit are reported for four compounds. The use of a smaller percentage of α-cyclodextrin results in lower cost; no loss of analytical integrity, compared with that for an 80% α-cyclodextrin/NaCl mixture; and easier handling of the α-cyclodextrin/NaCl mixtures.

Download Full-text

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3μm

Microelectronics Journal ◽

10.1016/s0026-2692(03)00066-1 ◽

2003 ◽

Vol 34 (5-8) ◽

pp. 631-633 ◽

Cited By ~ 3

Author(s):

M.J. da Silva ◽

S. Martini ◽

T.E. Lamas ◽

A.A. Quivy ◽

E.C.F. da Silva ◽

...

Keyword(s):

Growth Rate ◽

Quantum Dots ◽

Room Temperature ◽

Room Temperature Luminescence

Download Full-text

Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy

Selected Topics in Group IV and II–VI Semiconductors ◽

10.1016/b978-0-444-82411-0.50012-7 ◽

1996 ◽

pp. 15-20

Author(s):

H. Presting ◽

T. Zinke ◽

O. Brux ◽

M. Gail ◽

G. Abstreiter ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Room Temperature Luminescence

Download Full-text

Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab0518 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035030 ◽

Cited By ~ 1

Author(s):

Karsten Bothe ◽

Sandra Herlufsen ◽

John D Murphy

Keyword(s):

Room Temperature ◽

Luminescence Efficiency ◽

Room Temperature Luminescence

Download Full-text

Study of the Radiative and Non-Radiative Recombination Processes at Dislocations in Silicon by Photoluminescence and LBIC Measurements

MRS Proceedings ◽

10.1557/proc-588-117 ◽

1999 ◽

Vol 588 ◽

Cited By ~ 6

Author(s):

S. Pizzini ◽

S. Binetti ◽

M. Acciarri ◽

M. Casati

Keyword(s):

Radiative Recombination ◽

Room Temperature ◽

Light Emission ◽

Energy Levels ◽

The Third ◽

Optical Telecommunications ◽

Recombination Processes ◽

Metallic Impurities ◽

Room Temperature Luminescence ◽

Dislocation Related Luminescence

AbstractIt is well known that the sharp, room temperature luminescence emission at 1.54 μm from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related luminescence in silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.In order to go more insight on the problem, we started a systematic work on CZ silicon, aimed at understanding the properties of dislocation luminescence. The identification of the energy levels involved in the different dislocation PL bands has been obtained.

Download Full-text